Enhancement of flux pinning by H+and Xe+irradiation in epitaxial thin films of Ba2YCu3O7−δ

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pp. 2932-2934 ◽  
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A. V. POP ◽  
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E. MOCOCEAN ◽  
C. BEIUSEANU ◽  
...  

The scaling behavior of the effective activation energy of high-quality epitaxial c-oriented YBa 2( Cu 1-x Zn x)3 O 7-d thin films has been studied as a function of temperature and magnetic field. For all samples, the effective activation energy scales as U(T, μ0H) = U0(1 - T/T c )mHn with exponent m = 1.6 ± 0.02 - 1.3 ± 0.02 and the field scaling 1/μ0H and - ln μ0H for thick films and ultrathin films, respectively. The results are discussed taking account of the influence of the Zn substitution on the flux pinning in epitaxial YBa 2( Cu 1-x Zn x)3 O 7-d thin films.


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