High‐temperature hole mobility in strained quantum wells

1991 ◽  
Vol 59 (23) ◽  
pp. 3021-3023 ◽  
Author(s):  
B. Laikhtman
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Hole Mobility ◽  
Strained Quantum Wells

High temperature (77 °C) operation of 634 nm InGaAlP multiquantum‐well laser diodes with tensile‐strained quantum wells

1993 ◽  
Vol 63 (11) ◽  
pp. 1486-1488 ◽  
Author(s):  
Minoru Watanabe ◽  
John Rennie ◽  
Masaki Okajima ◽  
Gen‐ichi Hatakoshi
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Laser Diodes ◽  
Strained Quantum Wells ◽  
Multiquantum Well

High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells

2017 ◽  
Vol 10 (2) ◽  
pp. 021002 ◽  
Author(s):  
Hideaki Murotani ◽  
Katsuto Nakamura ◽  
Tomonori Fukuno ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Excitation

Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells

2001 ◽  
Vol 79 (10) ◽  
pp. 1483-1485 ◽  
Author(s):  
S. P. Łepkowski ◽  
H. Teisseyre ◽  
T. Suski ◽  
P. Perlin ◽  
N. Grandjean ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Strained Quantum Wells ◽  
Pressure Behavior ◽  
Piezoelectric Field

InGaAs/InP heterostructures with strained quantum wells and quantum dots (λ=1.5–1.9 µm)

1999 ◽  
Vol 33 (9) ◽  
pp. 1007-1009
Author(s):  
Z. N. Sokolova ◽  
D. A. Vinokurov ◽  
I. S. Tarasov ◽  
N. A. Gun’ko ◽  
G. G. Zegrya
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Strained Quantum Wells

Investigation of MOVPE growth of silicon δ-doped GaAs epilayers and InxGa1−xAs/GaAs strained quantum wells

Vacuum ◽  
2004 ◽  
Vol 74 (2) ◽  
pp. 263-267 ◽  
Author(s):  
B. Ściana ◽  
D. Radziewicz ◽  
B. Paszkiewicz ◽  
M. Tłaczała ◽  
P. Sitarek ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Strained Quantum Wells ◽  
Movpe Growth
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