Initial stage of InAs on GaAs grown by molecular‐beam epitaxy studied with low‐energy ion scattering

1991 ◽  
Vol 59 (27) ◽  
pp. 3577-3579 ◽  
Author(s):  
Minoru Kubo ◽  
Tadashi Narusawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Energy ◽  
Ion Scattering ◽  
Low Energy Ion Scattering ◽  
Initial Stage

RHEED studies of initial stage of Ge film growth on (311)Si by gas source molecular beam epitaxy

1993 ◽  
Vol 128 (1-4) ◽  
pp. 319-326 ◽  
Author(s):  
Y. Yasuda ◽  
K. Itoh ◽  
N. Ohshima ◽  
Y. Koide ◽  
S. Zaima
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Film Growth ◽  
Gas Source ◽  
Initial Stage

Ion‐beam doping of GaAs with low‐energy (100 eV) C+using combined ion‐beam and molecular‐beam epitaxy

1995 ◽  
Vol 77 (1) ◽  
pp. 146-152 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Stefan Winter ◽  
Akimasa Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy
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