Electric field‐dependent conductivity of polycrystalline diamond thin films

1991 ◽  
Vol 59 (12) ◽  
pp. 1494-1496 ◽  
Author(s):  
Bohr‐ran Huang ◽  
D. K. Reinhard
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Polycrystalline Diamond ◽  
Field Dependent ◽  
Diamond Thin Films

Measurement of The Activation Energy in Phosphorous Doped Polycrystalline Diamond Thin Films Grown on Silicon Substrates by Hot Filament Chemical Vapor Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
S. Mirzakuchaki ◽  
H. Golestanian ◽  
E. J. Charlson ◽  
T. Stacy
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Silicon Substrates ◽  
Boron Doped Diamond ◽  
Diamond Thin Films ◽  
Hot Filament

AbstractAlthough many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.

Selective and low temperature synthesis of polycrystalline diamond

1991 ◽  
Vol 6 (6) ◽  
pp. 1278-1286 ◽  
Author(s):  
R. Ramesham ◽  
T. Roppel ◽  
C. Ellis ◽  
D.A. Jaworske ◽  
W. Baugh
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Microwave Plasma ◽  
Diamond Particle ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Crystal Silicon ◽  
Diamond Thin Films

Polycrystalline diamond thin films have been deposited on single crystal silicon substrates at low temperatures (⋚ 600 °C) using a mixture of hydrogen and methane gases by high pressure microwave plasma-assisted chemical vapor deposition. Low temperature deposition has been achieved by cooling the substrate holder with nitrogen gas. For deposition at reduced substrate temperature, it has been found that nucleation of diamond will not occur unless the methane/hydrogen ratio is increased significantly from its value at higher substrate temperature. Selective deposition of polycrystalline diamond thin films has been achieved at 600 °C. Decrease in the diamond particle size and growth rate and an increase in surface smoothness have been observed with decreasing substrate temperature during the growth of thin films. As-deposited films are identified by Raman spectroscopy, and the morphology is analyzed by scanning electron microscopy.

Selective Growth of Poly-Diamond Thin Films Using Selective Damaging by Ultrasonic Agitation on a Variety of Substrates

1991 ◽  
Vol 226 ◽  
Author(s):  
R. Ramesham ◽  
T. Roppel ◽  
C. Ellis
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Polycrystalline Diamond ◽  
Selective Growth ◽  
Ultrasonic Agitation ◽  
Sapphire Substrates ◽  
Diamond Thin Films ◽  
Scanning Electron ◽  
Novel Processes

AbstractPolycrystalline diamond thin films have been selectively deposited on Si, SiO2, Si3 N4, Ta, Mo, alumina, and sapphire substrates using selective damaging by ultrasonic agitation. Novel processes were developed to selectively damage the polished substrates by ultrasonic agitation. Optical and scanning electron microscopy is used to study selectivity and morphology of as-grown diamond thin films.

Low Volume Resistivity Chemical Vapor Deposited Boron Doped Polycrystalline Thin Diamond Film Growth on Sapphire

1996 ◽  
Vol 423 ◽  
Author(s):  
Hassan Golestanian ◽  
S. Mirzakuchaki ◽  
E. J. Charlson ◽  
T. Stacy ◽  
E. M. Charlson
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Volume Resistivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Boron Doped ◽  
Chemical Vapor Deposited ◽  
Low Volume ◽  
Diamond Thin Films

AbstractHot-filament chemical vapor deposited (HFCVD) boron doped polycrystalline diamond thin films having low volume resistivity were grown on sapphire. The films were characterized using scanning electron microscope (SEM), X-ray diffraction, and current-voltage measurements. SEM micrographs show good crystalline structure with preferred (100) orientation normal to the surface of the film. X-ray diffraction pattern revealed diamond characteristics with the four typical diamond peaks present. Finally, the obtained I-V characteristics indicated that the film's volume resistivity is at least two orders of magnitude lower than those of HFCVD polycrystalline diamond thin films grown on silicon under similar growth conditions.

Local impedance imaging of boron-doped polycrystalline diamond thin films

2014 ◽  
Vol 105 (13) ◽  
pp. 131908 ◽  
Author(s):  
A. Zieliński ◽  
R. Bogdanowicz ◽  
J. Ryl ◽  
L. Burczyk ◽  
K. Darowicki
Keyword(s):  
Thin Films ◽  
Polycrystalline Diamond ◽  
Impedance Imaging ◽  
Boron Doped ◽  
Diamond Thin Films

Electrical Properties Of Undoped Polycrystalline Diamond Thin Films On Silicon

1995 ◽  
Vol 416 ◽  
Author(s):  
Anders Jauhiainen ◽  
Stefan Bengtsson ◽  
Olof Engström
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Transport Model ◽  
Functional Dependence ◽  
Energy Levels ◽  
Chemical Vapour ◽  
Polycrystalline Diamond ◽  
Diamond Layer ◽  
Diamond Thin Films ◽  
Dc Current

ABSTRACTWe have investigated the electrical properties of undoped polycrystalline diamond thin films deposited on (100)-oriented n-type and p-type silicon substrates. The films, intended for electronic applications, were manufactured using hot filament chemical vapour deposition (HFCVD). To a large extent the capacitance-voltage characteristics are influenced by traps located close to the interface between the diamond layer and the silicon substrate. These traps play an important role for voltage sharing between the diamond layer and the silicon space charge region. The DC current density through the diamond film has the same functional dependence on the electric field for films deposited on both n- and p-Si. The field dependency agrees with a Frenkel-Poole transport model. Further, although the DC current transport is thermally activated, it does not follow an Arrhenius relation. A possible reason is that traps within a broad range of energy levels are involved in the charge transport. Finally, current transients resulting from stepwise changes in the applied voltage follow a power law time dependence where the kinetics depend only weakly on temperature.

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