Conductivity‐type inversion following low‐energy hydrogen implantation

1991 ◽  
Vol 58 (18) ◽  
pp. 1985-1987 ◽  
Author(s):  
Tian‐Qun Zhou ◽  
Zbigniew Radzimski ◽  
Bijoy Patnaik ◽  
George A. Rozgonyi ◽  
Bhushan Sopori
Keyword(s):  
Low Energy ◽  
Conductivity Type ◽  
Hydrogen Implantation

Low-energy hydrogen implantation for silicon Schottky barrier modification

Vacuum ◽  
1986 ◽  
Vol 36 (11-12) ◽  
pp. 917-920 ◽  
Author(s):  
S Ashok ◽  
SA Ringel
Keyword(s):  
Schottky Barrier ◽  
Low Energy ◽  
Hydrogen Implantation

Boron neutralization and hydrogen diffusion in silicon subjected to low-energy hydrogen implantation

1989 ◽  
Vol 48 (1) ◽  
pp. 31-40 ◽  
Author(s):  
T. Zundel ◽  
A. Mesli ◽  
J. C. Muller ◽  
P. Siffert
Keyword(s):  
Hydrogen Diffusion ◽  
Low Energy ◽  
Hydrogen Implantation

SEM Investigation of Surface Defects Arising at the Formation of a Buried Nitrogen-Containing Layer in Silicon

2007 ◽  
Vol 131-133 ◽  
pp. 195-200 ◽  
Author(s):  
A.V. Frantskevich ◽  
Anis M. Saad ◽  
A.K. Fedotov ◽  
E.I. Rau ◽  
A.V. Mazanik ◽  
...  
Keyword(s):  
Room Temperature ◽  
Surface Defects ◽  
Vacuum Annealing ◽  
Plasma Source ◽  
Hydrogen Ion ◽  
Conductivity Type ◽  
Boron Doped ◽  
Hydrogen Implantation ◽  
Hydrogen Ion Implantation ◽  
Sem Investigation

The main goal of this work is to demonstrate the correlation between the density and type of surface defects arising during the formation of a buried nitrogen-containing layer in Si wafers, and the number of buried defects formed by different dose hydrogen preimplantation. Standard commercial 12 ⋅cm boron-doped and 4.5 ⋅cm phosphorous-doped Cz Si wafers were subjected to hydrogen ion implantation at room temperature with the energy 100 keV and doses 1⋅1015 - 4⋅1016 at/cm2. Then nitrogen was introduced into silicon from a DC plasma source at a temperature of 300 oС. Finally, all samples were subjected to 2 h vacuum annealing at 900 oС. The experiments have shown that the density and type of the surface defects depend significantly on the dose of hydrogen implantation, parameters of N+-plasma treatment, and conductivity type of silicon. Optimization of the above-mentioned parameters makes it possible to create the substrates containing a buried dielectric SixNy layer and having a practically defect-free surface.

A modified broad beam ion source for low-energy hydrogen implantation

1998 ◽  
Vol 69 (3) ◽  
pp. 1499-1504 ◽  
Author(s):  
K. Otte ◽  
A. Schindler ◽  
F. Bigl ◽  
H. Schlemm
Keyword(s):  
Ion Source ◽  
Low Energy ◽  
Broad Beam ◽  
Hydrogen Implantation

A novel kerf-free wafering process combining stress-induced spalling and low energy hydrogen implantation

2016 ◽  
Vol 13 (10-12) ◽  
pp. 802-806
Author(s):  
Timothée Pingault ◽  
Pauline Sylvia Pokam-Kuisseu ◽  
Esidor Ntsoenzok ◽  
Jean-Philippe Blondeau ◽  
Alexander Ulyashin ◽  
...  
Keyword(s):  
Low Energy ◽  
Hydrogen Implantation

Passivation and reactivation of shallow level defects in p-CdTe after low-energy hydrogen implantation

2000 ◽  
Vol 214-215 ◽  
pp. 979-982 ◽  
Author(s):  
U Reislöhner ◽  
N Achtziger ◽  
C Hülsen ◽  
W Witthuhn
Keyword(s):  
Low Energy ◽  
Shallow Level ◽  
Hydrogen Implantation

Study of low-energy hydrogen implantation in silicon

Vacuum ◽  
1989 ◽  
Vol 39 (11-12) ◽  
pp. 1057-1060
Author(s):  
K Srikanth ◽  
S Ashok
Keyword(s):  
Low Energy ◽  
Hydrogen Implantation

Effect of Low Energy Hydrogen Implants on Damage Caused by Argon Ion Beam Etching

1983 ◽  
Vol 25 ◽  
Author(s):  
A. Climent ◽  
J.-S. Wang ◽  
S. J. Fonash
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Low Energy ◽  
Silicon Surfaces ◽  
Hydrogen Passivation ◽  
Hydrogen Ions ◽  
Ion Beam Etching ◽  
Hydrogen Implantation ◽  
Argon Ions ◽  
Argon Ion

ABSTRACTThe dry etching technologies reactive ion etching (RIE) and ion beam etching (IBE) have both been shown to cause a damaged layer at silicon surfaces. It has been demonstrated that this damage can be annealed out or, alternatively, it can be passivated with low energy hydrogen implants from a Kaufman ion source. This study further explores the hydrogen passivation approach by focusing on the effect of hydrogen implantation on damage caused by argon ion beam etching. The lighter hydrogen ions are actually shown ta cause more extensive damage than the heavier argon ions. However, by using low-energy hydrogen implants all damage, that present from the Ar and that generated during the hydrogen implant, can be passivated.

Improved Passivation of Silicon Solar Cells Using Combined Low-Energy Hydrogen Implantation and Optical Processing

1993 ◽  
Vol 303 ◽  
Author(s):  
Bhushan L. Sopori
Keyword(s):  
Solar Cells ◽  
Hydrogen Diffusion ◽  
Low Energy ◽  
Silicon Solar Cells ◽  
Back Side ◽  
Optical Processing ◽  
Impurity Defect ◽  
Mobile Hydrogen ◽  
Hydrogen Implantation ◽  
Improved Technique

ABSTRACTAn improved technique for impurity/defect passivation of silicon solar cells is described. A low-energy hydrogen implantation is performed from the back side of solar cells to produce a deep hydrogen diffusion. The deep diffusion is believed to be caused by the formation of a mobile hydrogen-vacancy (H-V) complex. Next, a layer of Al is deposited on the hydrogenated side and an Optical Processing (OP) step is performed. The OP step accomplishes several objectives that include formation of an ohmic contact, dissociation of H-V complexes to release hydrogen that can participate in further passivation, and dissolution and regrowth of the highly defected surface layer.

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