A novel kerf-free wafering process combining stress-induced spalling and low energy hydrogen implantation

2016 ◽  
Vol 13 (10-12) ◽  
pp. 802-806
Author(s):  
Timothée Pingault ◽  
Pauline Sylvia Pokam-Kuisseu ◽  
Esidor Ntsoenzok ◽  
Jean-Philippe Blondeau ◽  
Alexander Ulyashin ◽  
...  
Keyword(s):  
Low Energy ◽  
Hydrogen Implantation

Low-energy hydrogen implantation for silicon Schottky barrier modification

Vacuum ◽  
1986 ◽  
Vol 36 (11-12) ◽  
pp. 917-920 ◽  
Author(s):  
S Ashok ◽  
SA Ringel
Keyword(s):  
Schottky Barrier ◽  
Low Energy ◽  
Hydrogen Implantation

Boron neutralization and hydrogen diffusion in silicon subjected to low-energy hydrogen implantation

1989 ◽  
Vol 48 (1) ◽  
pp. 31-40 ◽  
Author(s):  
T. Zundel ◽  
A. Mesli ◽  
J. C. Muller ◽  
P. Siffert
Keyword(s):  
Hydrogen Diffusion ◽  
Low Energy ◽  
Hydrogen Implantation

A modified broad beam ion source for low-energy hydrogen implantation

1998 ◽  
Vol 69 (3) ◽  
pp. 1499-1504 ◽  
Author(s):  
K. Otte ◽  
A. Schindler ◽  
F. Bigl ◽  
H. Schlemm
Keyword(s):  
Ion Source ◽  
Low Energy ◽  
Broad Beam ◽  
Hydrogen Implantation

Conductivity‐type inversion following low‐energy hydrogen implantation

1991 ◽  
Vol 58 (18) ◽  
pp. 1985-1987 ◽  
Author(s):  
Tian‐Qun Zhou ◽  
Zbigniew Radzimski ◽  
Bijoy Patnaik ◽  
George A. Rozgonyi ◽  
Bhushan Sopori
Keyword(s):  
Low Energy ◽  
Conductivity Type ◽  
Hydrogen Implantation

Passivation and reactivation of shallow level defects in p-CdTe after low-energy hydrogen implantation

2000 ◽  
Vol 214-215 ◽  
pp. 979-982 ◽  
Author(s):  
U Reislöhner ◽  
N Achtziger ◽  
C Hülsen ◽  
W Witthuhn
Keyword(s):  
Low Energy ◽  
Shallow Level ◽  
Hydrogen Implantation

Study of low-energy hydrogen implantation in silicon

Vacuum ◽  
1989 ◽  
Vol 39 (11-12) ◽  
pp. 1057-1060
Author(s):  
K Srikanth ◽  
S Ashok
Keyword(s):  
Low Energy ◽  
Hydrogen Implantation

Effect of Low Energy Hydrogen Implants on Damage Caused by Argon Ion Beam Etching

1983 ◽  
Vol 25 ◽  
Author(s):  
A. Climent ◽  
J.-S. Wang ◽  
S. J. Fonash
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Low Energy ◽  
Silicon Surfaces ◽  
Hydrogen Passivation ◽  
Hydrogen Ions ◽  
Ion Beam Etching ◽  
Hydrogen Implantation ◽  
Argon Ions ◽  
Argon Ion

ABSTRACTThe dry etching technologies reactive ion etching (RIE) and ion beam etching (IBE) have both been shown to cause a damaged layer at silicon surfaces. It has been demonstrated that this damage can be annealed out or, alternatively, it can be passivated with low energy hydrogen implants from a Kaufman ion source. This study further explores the hydrogen passivation approach by focusing on the effect of hydrogen implantation on damage caused by argon ion beam etching. The lighter hydrogen ions are actually shown ta cause more extensive damage than the heavier argon ions. However, by using low-energy hydrogen implants all damage, that present from the Ar and that generated during the hydrogen implant, can be passivated.

Improved Passivation of Silicon Solar Cells Using Combined Low-Energy Hydrogen Implantation and Optical Processing

1993 ◽  
Vol 303 ◽  
Author(s):  
Bhushan L. Sopori
Keyword(s):  
Solar Cells ◽  
Hydrogen Diffusion ◽  
Low Energy ◽  
Silicon Solar Cells ◽  
Back Side ◽  
Optical Processing ◽  
Impurity Defect ◽  
Mobile Hydrogen ◽  
Hydrogen Implantation ◽  
Improved Technique

ABSTRACTAn improved technique for impurity/defect passivation of silicon solar cells is described. A low-energy hydrogen implantation is performed from the back side of solar cells to produce a deep hydrogen diffusion. The deep diffusion is believed to be caused by the formation of a mobile hydrogen-vacancy (H-V) complex. Next, a layer of Al is deposited on the hydrogenated side and an Optical Processing (OP) step is performed. The OP step accomplishes several objectives that include formation of an ohmic contact, dissociation of H-V complexes to release hydrogen that can participate in further passivation, and dissolution and regrowth of the highly defected surface layer.

Dissociated Σ=27 boundaries in silicon

1988 ◽  
Vol 46 ◽  
pp. 624-625
Author(s):  
A. Garg ◽  
W.A.T. Clark ◽  
J.P. Hirth
Keyword(s):  
Electron Diffraction ◽  
Local Minimum ◽  
Boundary Energy ◽  
Coincidence Site Lattice ◽  
Boundary Plane ◽  
Low Energy ◽  
Theoretical Understanding ◽  
Site Lattice ◽  
Kikuchi Pattern ◽  
Analysis Techniques

In the last twenty years, a significant amount of work has been done in the theoretical understanding of grain boundaries. The various proposed grain boundary models suggest the existence of coincidence site lattice (CSL) boundaries at specific misorientations where a periodic structure representing a local minimum of energy exists between the two crystals. In general, the boundary energy depends not only upon the density of CSL sites but also upon the boundary plane, so that different facets of the same boundary have different energy. Here we describe TEM observations of the dissociation of a Σ=27 boundary in silicon in order to reduce its surface energy and attain a low energy configuration.The boundary was identified as near CSL Σ=27 {255} having a misorientation of (38.7±0.2)°/[011] by standard Kikuchi pattern, electron diffraction and trace analysis techniques. Although the boundary appeared planar, in the TEM it was found to be dissociated in some regions into a Σ=3 {111} and a Σ=9 {122} boundary, as shown in Fig. 1.

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