Wavelength switching in narrow oxide stripe InGaAs‐GaAs‐AlGaAs strained‐layer quantum well heterostructure lasers

1991 ◽  
Vol 58 (19) ◽  
pp. 2076-2078 ◽  
Author(s):  
K. J. Beernink ◽  
J. J. Alwan ◽  
J. J. Coleman
Keyword(s):  
Quantum Well ◽  
Wavelength Switching ◽  
Strained Layer

Strained-layer quantum well heterostructure lasers

1992 ◽  
Vol 216 (1) ◽  
pp. 68-71 ◽  
Author(s):  
J.J. Coleman
Keyword(s):  
Quantum Well ◽  
Strained Layer

Properties of InxGa1−xAs‐GaAs strained‐layer quantum‐well‐heterostructure injection lasers

1985 ◽  
Vol 57 (1) ◽  
pp. 33-38 ◽  
Author(s):  
W. D. Laidig ◽  
Y. F. Lin ◽  
P. J. Caldwell
Keyword(s):  
Quantum Well ◽  
Strained Layer ◽  
Injection Lasers

High-power 0.98-μm strained-layer quantum-well lasers with InGaP cladding

1994 ◽  
Vol 7 (3) ◽  
pp. 139-143 ◽  
Author(s):  
Tetsuro Ijichi ◽  
Michio Ohkubo ◽  
Akira Iketani ◽  
Toshio Kikuta
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Strained Layer

Measurement of band offset of a strained‐layer single quantum well by a capacitance‐voltage technique

1993 ◽  
Vol 74 (12) ◽  
pp. 7618-7620 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
G. Fernandes ◽  
S. Banerjee
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Capacitance Voltage

Wavelength switching in InGaAs/InP quantum well lasers

1990 ◽  
Vol 56 (2) ◽  
pp. 122-124 ◽  
Author(s):  
K. Berthold ◽  
A. F. J. Levi ◽  
T. Tanbun‐Ek ◽  
R. A. Logan
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Wavelength Switching

Electronic States in Cd1−xZnxTe/CdTe Strained Layer Coupled Double Quantum Wells and their Photoluminescence

1994 ◽  
Vol 358 ◽  
Author(s):  
Tiesheng Li ◽  
H. J. Lozykowski
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Lattice Mismatch ◽  
Electronic States ◽  
Double Quantum ◽  
Strain Effect ◽  
Strained Layer ◽  
Quantum Well Structure ◽  
Double Quantum Well ◽  
Theoretical Investigations

ABSTRACTExperimental and theoretical investigations of electronic states in a strained-layer CdTe/CdZnTe coupled double quantum well structure are presented. The optical properties of this lattice mismatched heterostructure were characterized by photoluminescence (PL), PL excitation and polarization spectroscopies. The influence of electrical field on exciton states in the strained layer CdTe/CdZnTe coupled double quantum well structure is experimentally studied. The confined electronic states were calculated in the framework of the envelope function approach, taking into account the strain effect induced by the lattice-mismatch. Experimental results are compared with the calculated transition energies.

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