scholarly journals Electron and hole impact ionization coefficients in GaAs/Al0.45Ga0.55As/Al0.3Ga0.7As coupled well systems

1991 ◽  
Vol 58 (24) ◽  
pp. 2791-2793 ◽  
Author(s):  
P. K. Bhattacharya ◽  
Y. Zebda ◽  
J. Singh
Keyword(s):  
Impact Ionization ◽  
Ionization Coefficients

scholarly journals Impact Ionization Coefficients in (AlₓGa₁₋ₓ)0.52In0.48P and AlₓGa₁₋ₓAs Lattice-Matched to GaAs

2021 ◽  
pp. 1-6
Author(s):  
Harry I. J. Lewis ◽  
Liang Qiao ◽  
Jeng Shiuh Cheong ◽  
Aina N. A. P. Baharuddin ◽  
Andrey B. Krysa ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Ionization Coefficients ◽  
Lattice Matched

Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes

2009 ◽  
Vol 615-617 ◽  
pp. 311-314 ◽  
Author(s):  
W.S. Loh ◽  
J.P.R. David ◽  
B.K. Ng ◽  
Stanislav I. Soloviev ◽  
Peter M. Sandvik ◽  
...  
Keyword(s):  
Phonon Scattering ◽  
Impact Ionization ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Different Temperatures ◽  
Ionization Coefficients ◽  
Increasing Temperature ◽  
The Impact ◽  
Good Agreement ◽  
Ionization Rates

Hole initiated multiplication characteristics of 4H-SiC Separate Absorption and Multiplication Avalanche Photodiodes (SAM-APDs) with a n- multiplication layer of 2.7 µm were obtained using 325nm excitation at temperatures ranging from 300 to 450K. The breakdown voltages increased by 200mV/K over the investigated temperature range, which indicates a positive temperature coefficient. Local ionization coefficients, including the extracted temperature dependencies, were derived in the form of the Chynoweth expression and were used to predict the hole multiplication characteristics at different temperatures. Good agreement was obtained between the measured and the modeled multiplication using these ionization coefficients. The impact ionization coefficients decreased with increasing temperature, corresponding to an increase in breakdown voltage. This result agrees well with the multiplication characteristics and can be attributed to phonon scattering enhanced carrier cooling which has suppressed the ionization process at high temperatures. Hence, a much higher electric field is required to achieve the same ionization rates.

scholarly journals Impact ionization coefficients in Si1−xGex

1995 ◽  
Vol 66 (2) ◽  
pp. 204-205 ◽  
Author(s):  
J. Lee ◽  
A. L. Gutierrez‐Aitken ◽  
S. H. Li ◽  
P. K. Bhattacharya
Keyword(s):  
Impact Ionization ◽  
Ionization Coefficients

AlInAsSb Impact Ionization Coefficients

2019 ◽  
Vol 31 (4) ◽  
pp. 315-318 ◽  
Author(s):  
Yuan Yuan ◽  
Jiyuan Zheng ◽  
Ann K. Rockwell ◽  
Stephen D. March ◽  
Seth R. Bank ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Ionization Coefficients

Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes

2007 ◽  
Vol 556-557 ◽  
pp. 339-342 ◽  
Author(s):  
W.S. Loh ◽  
C. Mark Johnson ◽  
J.S. Ng ◽  
Peter M. Sandvik ◽  
Steve Arthur ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Submicron Devices ◽  
Illuminating Light ◽  
Factor Data ◽  
Ionization Coefficients ◽  
P Type ◽  
Dark Currents ◽  
The Impact

Hole initiated avalanche multiplication characteristics of 4H-SiC avalanche photodiodes have been studied. The diodes had n+-n-p SiC epitaxial layers grown on a p-type substrate. These 1 mm2 devices had very low dark currents and exhibited sharp breakdown at voltages of approximately 500V. The diodes multiplication characteristics appeared to be identical when the wavelength of the illuminating light from the top varied from 288 to 325nm, implying that almost pure hole initiated multiplication was occurring. The multiplication factor data were modelled using a local multiplication model with impact ionization coefficients of 4H-SiC reported by various authors. The impact ionization coefficients extracted from submicron devices by Ng et al. were found to give accurate predictions for multiplication factors within the uncertainties of the doping levels. This result suggests that their ionization coefficients can be applied to thicker bulk 4H-SiC structures.

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