Composition and growth kinetics of ultrathin SiO2films formed by oxidizing Si substrates in N2O

1990 ◽  
Vol 57 (26) ◽  
pp. 2808-2810 ◽  
Author(s):  
W. Ting ◽  
H. Hwang ◽  
J. Lee ◽  
D. L. Kwong
Keyword(s):  
Growth Kinetics ◽  
Si Substrates ◽  
Kinetics Of

Silicon Transport in Lateral Silicide Growth of CrSi2

1986 ◽  
Vol 71 ◽  
Author(s):  
L. R. Zheng ◽  
L. R. Doolittle ◽  
J. W. Mayer
Keyword(s):  
Growth Kinetics ◽  
Lateral Diffusion ◽  
Diffusion Couples ◽  
Si Substrates ◽  
Impurity Segregation ◽  
Silicide Growth ◽  
Device Geometry ◽  
Metal Layers ◽  
Kinetics Of ◽  
Influence Of Impurities

AbstractSilicide formation and growth are studied in three geometries: conventional planar thin films, lateral diffusion couples formed by depositing metal layers on Si islands, and device geometry couples formed by depositing metal on oxide-patterned Si substrates. The influence of impurities is studied by implanting arsenic and krypton into conventional and device geometry structures.Here we present growth kinetics of CrSi2 where the presence of impurities has a strong influence. Si transport dominates in disilicide formation and leads to erosion of contacts around the periphery of oxide windows. Implantation of arsenic suppresses CrSi 2 formation; with krypton implantation, the growth kinetics shifts from linear to square-root in character. We attribute these results to impurity segregation at interfaces or grain boundaries.

Composition and Growth Kinetics of the Interfacial Layer for MOCVD HfO[sub 2] Layers on Si Substrates

2004 ◽  
Vol 151 (4) ◽  
pp. F77 ◽  
Author(s):  
S. Van Elshocht ◽  
M. Caymax ◽  
S. De Gendt ◽  
T. Conard ◽  
J. Pétry ◽  
...  
Keyword(s):  
Growth Kinetics ◽  
Interfacial Layer ◽  
Si Substrates ◽  
Kinetics Of

Microstructure and Kinetic Analysis of the Initial Stages of SiC Formation in a Rapid Thermal Processor

1991 ◽  
Vol 224 ◽  
Author(s):  
Ki-Bum Kim ◽  
Jimmy C. Liao ◽  
Brad J. Burrow ◽  
Eileen A. Sullivan
Keyword(s):  
Growth Rate ◽  
High Resolution ◽  
Growth Kinetics ◽  
Kinetic Data ◽  
Carbon Layer ◽  
Cross Sectional ◽  
Si Substrates ◽  
Growth Modes ◽  
Reaction Proceeds ◽  
Kinetics Of

AbstractWe have investigated the evolution of the microstructure, growth modes, and growth kinetics of β-SiC in a rapid thermal processor using FTIR, ESCA, and TEM. SiC layers were formed by reacting C2H4 with Si substrates between 900 and 1300°C at 5 torr. We found that SiC forms discrete nuclei at 900°C, a mixture of discrete nuclei with a thin β-SiC layer in between those nuclei at around 1000°C, and a continuous β-SiC layer above 1100°C. In all cases, β-SiC grows epitaxially on Si substrates. In addition, we identified that a graphitic carbon layer is formed on top of a continuous β-SiC layer. The thickness of the SiC layer was deduced from the integrated absorption spectra of FTIR and measured from the high resolution cross-sectional TEM micrographs. Kinetic data indicate that SiC grows rapidly at the initial stages of reaction. The growth rate, however, is retarded significantly as the reaction proceeds.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Growth Kinetics of Quantum Size ZnO Particles

1998 ◽  
Vol 536 ◽  
Author(s):  
E. M. Wong ◽  
J. E. Bonevich ◽  
P. C. Searson
Keyword(s):  
Growth Kinetics ◽  
Ostwald Ripening ◽  
Chemical Potential ◽  
Colloidal Suspensions ◽  
Green Emission ◽  
Blue Shift ◽  
Constant Current ◽  
Mass Model ◽  
Zno Particles ◽  
Kinetics Of

AbstractColloidal chemistry techniques were used to synthesize ZnO particles in the nanometer size regime. The particle aging kinetics were determined by monitoring the optical band edge absorption and using the effective mass model to approximate the particle size as a function of time. We show that the growth kinetics of the ZnO particles follow the Lifshitz, Slyozov, Wagner theory for Ostwald ripening. In this model, the higher curvature and hence chemical potential of smaller particles provides a driving force for dissolution. The larger particles continue to grow by diffusion limited transport of species dissolved in solution. Thin films were fabricated by constant current electrophoretic deposition (EPD) of the ZnO quantum particles from these colloidal suspensions. All the films exhibited a blue shift relative to the characteristic green emission associated with bulk ZnO. The optical characteristics of the particles in the colloidal suspensions were found to translate to the films.

Growth kinetics of boride layers formed on GGG 40.3 ductile iron

2016 ◽  
Vol 58 (5) ◽  
pp. 418-421
Author(s):  
Fatma Ünal ◽  
Ahmet Topuz
Keyword(s):  
Growth Kinetics ◽  
Ductile Iron ◽  
Kinetics Of

scholarly journals Study of deposition parameters and growth kinetics of ZnO deposited by aerosol assisted chemical vapor deposition

RSC Advances ◽  
2021 ◽  
Vol 11 (30) ◽  
pp. 18493-18499
Author(s):  
Sergio Sánchez-Martín ◽  
S. M. Olaizola ◽  
E. Castaño ◽  
E. Urionabarrenetxea ◽  
G. G. Mandayo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Kinetics Analysis ◽  
Deposition Parameters ◽  
Kinetics Of

Impact of deposition parameters, microstructure and growth kinetics analysis of ZnO grown by Aerosol-assisted Chemical Vapor Deposition (AACVD).

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