Microstructure and Kinetic Analysis of the Initial Stages of SiC Formation in a Rapid Thermal Processor

1991 ◽  
Vol 224 ◽  
Author(s):  
Ki-Bum Kim ◽  
Jimmy C. Liao ◽  
Brad J. Burrow ◽  
Eileen A. Sullivan

AbstractWe have investigated the evolution of the microstructure, growth modes, and growth kinetics of β-SiC in a rapid thermal processor using FTIR, ESCA, and TEM. SiC layers were formed by reacting C2H4 with Si substrates between 900 and 1300°C at 5 torr. We found that SiC forms discrete nuclei at 900°C, a mixture of discrete nuclei with a thin β-SiC layer in between those nuclei at around 1000°C, and a continuous β-SiC layer above 1100°C. In all cases, β-SiC grows epitaxially on Si substrates. In addition, we identified that a graphitic carbon layer is formed on top of a continuous β-SiC layer. The thickness of the SiC layer was deduced from the integrated absorption spectra of FTIR and measured from the high resolution cross-sectional TEM micrographs. Kinetic data indicate that SiC grows rapidly at the initial stages of reaction. The growth rate, however, is retarded significantly as the reaction proceeds.

1984 ◽  
Vol 37 (11) ◽  
pp. 2249
Author(s):  
KA Ahmed ◽  
PJ Hanhela ◽  
M Hassan ◽  
J Miller ◽  
DB Paul

The activating effect of the phenylazo substituent in electrophilic substitution has been examined. The rates and partial rate factors for chlorination of azobenzene with molecular chlorine and protonated chlorine acetate have been determined relative to benzene. Whereas the chlorine acetate reaction proceeds readily (relative rate 4900) there is virtually no activation to chlorination by molecular chlorine. Complexes between azobenzene and bromine were, however, isolated and chatacterized. Their formation implies that during molecular halogenation reactions the electrophile is essentially unavailable. The relative chlorination rates for azobenzene and azoxybenzene have also been established: the phenylazo group is more activating towards protonated chlorine acetate whereas azoxybenzene (which does not complex with halogens) is the more reactive with molecular chlorine. The chlorination results confirm the versatility of the phenylazo group which is the first substituent for which kinetic data have been obtained quantifying activation of aromatic electrophilic, radical and nucleophilic substitution.


1986 ◽  
Vol 71 ◽  
Author(s):  
L. R. Zheng ◽  
L. R. Doolittle ◽  
J. W. Mayer

AbstractSilicide formation and growth are studied in three geometries: conventional planar thin films, lateral diffusion couples formed by depositing metal layers on Si islands, and device geometry couples formed by depositing metal on oxide-patterned Si substrates. The influence of impurities is studied by implanting arsenic and krypton into conventional and device geometry structures.Here we present growth kinetics of CrSi2 where the presence of impurities has a strong influence. Si transport dominates in disilicide formation and leads to erosion of contacts around the periphery of oxide windows. Implantation of arsenic suppresses CrSi 2 formation; with krypton implantation, the growth kinetics shifts from linear to square-root in character. We attribute these results to impurity segregation at interfaces or grain boundaries.


2007 ◽  
Vol 124-126 ◽  
pp. 539-542
Author(s):  
Eui Tae Kim ◽  
Anupam Madhukar

We discuss the growth kinetics of InAs/GaAs self-assembled quantum dots (QDs) using two different InAs deposition rates, relatively fast growth rate of 0.22 ML/sec and slow growth rate of 0.054 ML/sec. With increasing InAs deposition amount to 3.0 ML, the QD density was almost constant after 2D to 3D island transition at the slow deposition rate while the QD density kept increasing and the QD size distribution was relatively broad at the fast growth rate. After the 2D to 3D transition, at the slow growth rate, further deposited In adatoms seemed to incorporate primarily into already formed islands, and thus contribute to equalize island size. The photoluminescence (PL) full-width at half maximum (FWHM) of 2.5 ML InAs QDs at 0.054 ML/sec was 23 meV at 78K. The PL characteristics of InAs/GaAs QDs were degraded significantly after thermal annealing at 550 oC for 3 hours.


2004 ◽  
Vol 19 (10) ◽  
pp. 3081-3089 ◽  
Author(s):  
Hyun-Mi Kim ◽  
Sung-Soo Yim ◽  
Ki-Bum Kim ◽  
Seung-Hyun Moon ◽  
Young-Woon Kim ◽  
...  

This paper describes the growth kinetics of an interfacial MgO layer as well as those of an MgB2 layer during ex situ annealing of the evaporated amorphous boron (a-B) film under Mg vapor overpressure. A thin MgO layer is formed at the interface between a-B and Al2O3 substrate before the formation of crystalline MgB2 layer and the interfacial layer is epitaxially related with Al2O3 substrate (MgO (111)[110] // Al2O3 (0001)[1100]). The interfacial MgO layer continues to grow during the annealing, and its apparent growth rate is about 0.1 nm/min. The analysis of MgB2 layer growth kinetics using cross-sectional transmission electron microscopy reveals that there exist two distinct growth fronts at both sides of an MgB2 layer. The growth kinetics of the lower MgB2 layer obeys the parabolic rate law during the entire annealing time. The growth of the upper MgB2 layer is controlled by the surface reaction between out-diffused boron and Mg vapor up to 10 min, resulting in a rough surface morphology of MgB2 layer. By considering the mass balance of Mg and boron during ex situ annealing, we obtained the diffusivities of Mg and boron in MgB2 layer which were in the same order range of approximately 10−12 cm2/s.


1998 ◽  
Vol 62 (3) ◽  
pp. 646-666 ◽  
Author(s):  
Karin Kovárová-Kovar ◽  
Thomas Egli

SUMMARY Growth kinetics, i.e., the relationship between specific growth rate and the concentration of a substrate, is one of the basic tools in microbiology. However, despite more than half a century of research, many fundamental questions about the validity and application of growth kinetics as observed in the laboratory to environmental growth conditions are still unanswered. For pure cultures growing with single substrates, enormous inconsistencies exist in the growth kinetic data reported. The low quality of experimental data has so far hampered the comparison and validation of the different growth models proposed, and only recently have data collected from nutrient-controlled chemostat cultures allowed us to compare different kinetic models on a statistical basis. The problems are mainly due to (i) the analytical difficulty in measuring substrates at growth-controlling concentrations and (ii) the fact that during a kinetic experiment, particularly in batch systems, microorganisms alter their kinetic properties because of adaptation to the changing environment. For example, for Escherichia coli growing with glucose, a physiological long-term adaptation results in a change in KS for glucose from some 5 mg liter−1 to ca. 30 μg liter−1. The data suggest that a dilemma exists, namely, that either “intrinsic” KS (under substrate-controlled conditions in chemostat culture) or μmax (under substrate-excess conditions in batch culture) can be measured but both cannot be determined at the same time. The above-described conventional growth kinetics derived from single-substrate-controlled laboratory experiments have invariably been used for describing both growth and substrate utilization in ecosystems. However, in nature, microbial cells are exposed to a wide spectrum of potential substrates, many of which they utilize simultaneously (in particular carbon sources). The kinetic data available to date for growth of pure cultures in carbon-controlled continuous culture with defined mixtures of two or more carbon sources (including pollutants) clearly demonstrate that simultaneous utilization results in lowered residual steady-state concentrations of all substrates. This should result in a competitive advantage of a cell capable of mixed-substrate growth because it can grow much faster at low substrate concentrations than one would expect from single-substrate kinetics. Additionally, the relevance of the kinetic principles obtained from defined culture systems with single, mixed, or multicomponent substrates to the kinetics of pollutant degradation as it occurs in the presence of alternative carbon sources in complex environmental systems is discussed. The presented overview indicates that many of the environmentally relevant apects in growth kinetics are still waiting to be discovered, established, and exploited.


2004 ◽  
Vol 151 (4) ◽  
pp. F77 ◽  
Author(s):  
S. Van Elshocht ◽  
M. Caymax ◽  
S. De Gendt ◽  
T. Conard ◽  
J. Pétry ◽  
...  

1999 ◽  
Vol 564 ◽  
Author(s):  
H. Y. Huang ◽  
L. J. Chen

AbstractThe oxidation of Si catalyzed by 170-nm-thick Cu3Si at elevated temperatures has been investigated by transmission electron microscopy and Auger electron spectroscopy. For wet oxidation at 140–180 °C, the growth rate of the oxide layer was increased with the temperature. On the other hand, as the temperature was increased above 200 °C, the growth rate slowed down. The growth kinetics of oxide was investigated. Controlling mechanisms for the growth of oxide owing to the grain growth of Cu3Si are discussed. The activation energy for the linear growth of oxide was measured to be 0. 19 ± 0.1 eV.


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