Impact ionization in the base of a hot‐electron AlSb/InAs bipolar transistor

1990 ◽  
Vol 57 (17) ◽  
pp. 1772-1774 ◽  
Author(s):  
Arvind S. Vengurlekar ◽  
Federico Capasso ◽  
T. Heng Chiu
Keyword(s):  
Impact Ionization ◽  
Bipolar Transistor ◽  
Hot Electron

Hot Carrier Degradation of Gain in Bipolar Transistors

1995 ◽  
Vol 391 ◽  
Author(s):  
Isik C. Kizilyalli ◽  
Jeff D. Bude
Keyword(s):  
Impact Ionization ◽  
High Energy ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Current Gain ◽  
Exponential Dependence ◽  
Hot Electron ◽  
Hot Carrier ◽  
Bicmos Technology ◽  
Doping Profiles

AbstractIn this paper hot carrier related aging of n-p-n bipolar transistors is investigated experimentally and theoretically to bring physical insight into the bipolar transistor hFE (common emitter current gain) degradation. Electrical stress experiments are performed on transistors with different base doping profiles at varying temperatures. Detailed process simulations are performed to determine the doping profiles of the base-emitter junction. Monte Carlo transport simulations are then performed at different temperatures and bias conditions to determine the electron and hole distribution functions in the baseemitter junction. AT&T's 0.8 μ.m BICMOS technology is used to fabricate the experimental bipolar transistor structures. For this non-self aligned technology we attribute hFE degradation to the presence of hot holes and secondary electrons which are generated by hot hole impact ionization. This feed-back due to impact ionization has a dominant effect on the high energy tails of the distribution of both holes and electrons even when the overall current multiplication is low. Simple hot electron energy transport models do not contain the complexity to properly describe ionization feedback and carrier heating, and are therefore inadequate. An exponential dependence of the transistor lifetime on BVEBO is deduced for constant voltage stress (Vstress < BVEBO) conditions, confirming the importance of secondaries in the process of degradation.

Photoexcited hot electron relaxation processes in n-HgCdTe through impact ionization into traps

1991 ◽  
Author(s):  
D. G. Seiler ◽  
J. R. Lowney ◽  
C. L. Littler ◽  
I. T. Yoon ◽  
M. R. Loloee
Keyword(s):  
Impact Ionization ◽  
Relaxation Processes ◽  
Hot Electron ◽  
Electron Relaxation

A New Reverse Base Current (RBC) of the Bipolar Transistor Induced by Impact Ionization

1989 ◽  
Vol 28 (Part 2, No. 12) ◽  
pp. L2150-L2152 ◽  
Author(s):  
Koji Sakui ◽  
Takehiro Hasegawa ◽  
Tsuneaki Fuse ◽  
Toshiki Seshita ◽  
Seiichi Aritome ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Bipolar Transistor ◽  
Base Current

Impact Ionization, Degradation, and Breakdown in SiO2

1992 ◽  
Vol 284 ◽  
Author(s):  
D. J. Dimaria ◽  
E. Cartier ◽  
D. Arnold
Keyword(s):  
Silicon Dioxide ◽  
Temperature Dependence ◽  
Impact Ionization ◽  
Charge Trapping ◽  
Oxide Thickness ◽  
Bandgap Energy ◽  
Strongly Correlated ◽  
Hot Electron ◽  
Defect Production ◽  
Oxide Degradation

ABSTRACTDestructive breakdown in silicon dioxide is shown to be strongly correlated to the oxide degradation caused by hot-electron-induced defect production and charge trapping ner the interfaces of the films. Two well defined transitions in the chargc-to-breakdown data as a function of field and oxide thickness are shown to coincide with the onset of mechanisms due to trap creation and impact ionization by electrons with energies exceeding 2 and 9 eV (the SiO2 bandgap energy), respectively. The temperature dependence of charge-to-breakdown is also shown to be consistent with that of these two defect-producing mechanisms.

Effect of Electric Field and Current Injection on the Main Electron Trap in Bulk GaAs

1980 ◽  
Vol 2 ◽  
Author(s):  
S. Makram–Ebeid
Keyword(s):  
Impact Ionization ◽  
Electron Trap ◽  
Hot Electron ◽  
Tunneling Model ◽  
Bulk Gaas ◽  
Low Field ◽  
Assisted Tunneling ◽  
High Fields ◽  
Franck Condon ◽  
Good Agreement

ABSTRACTThe dark capacitive transients related to the main electron trap in bulk and VPE GaAs have been studied in detail. The low temperature low field transients are induced by electrons injected from the metal counter electrode. Both hot electron capture and impact ionization effects are observed. At high fields, a phonon assisted tunneling model accounts for the observations and yields the values of the Franck Condon Shift Sw and the energy w of the phonon coupled to the level. These values are found to be in good agreement with other independent estimates.

Influence of impact-ionization-induced base current reversal on bipolar transistor parameters

1995 ◽  
Vol 42 (9) ◽  
pp. 1636-1646 ◽  
Author(s):  
L. Vendrame ◽  
E. Zabotto ◽  
A. Dal Fabbro ◽  
A. Zanini ◽  
G. Verzellesi ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Bipolar Transistor ◽  
Base Current ◽  
Current Reversal

Hot electron transport and impact ionization in the narrow energy gap InAs1−xNx alloy

2010 ◽  
Vol 96 (5) ◽  
pp. 052115 ◽  
Author(s):  
O. Makarovsky ◽  
W. H. M. Feu ◽  
A. Patanè ◽  
L. Eaves ◽  
Q. D. Zhuang ◽  
...  
Keyword(s):  
Electron Transport ◽  
Impact Ionization ◽  
Energy Gap ◽  
Hot Electron ◽  
Hot Electron Transport

Hot-electron-induced light emission and impact ionization in GaAs-based devices

1993 ◽  
Author(s):  
Carlo Tedesco ◽  
Claudio Canali ◽  
Manfredo Manfredi ◽  
Andrea Neviani ◽  
Enrico Zanoni
Keyword(s):  
Impact Ionization ◽  
Light Emission ◽  
Hot Electron
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