Hot-electron-induced light emission and impact ionization in GaAs-based devices

1993 ◽  
Author(s):  
Carlo Tedesco ◽  
Claudio Canali ◽  
Manfredo Manfredi ◽  
Andrea Neviani ◽  
Enrico Zanoni
Keyword(s):  
Impact Ionization ◽  
Light Emission ◽  
Hot Electron

Impact ionization, recombination, and visible light emission in AlGaAs/GaAs high electron mobility transistorsa)

1991 ◽  
Vol 70 (1) ◽  
pp. 529-531 ◽  
Author(s):  
Enrico Zanoni ◽  
Alessandro Paccagnella ◽  
Pietro Pisoni ◽  
Paolo Telaroli ◽  
Carlo Tedesco ◽  
...  
Keyword(s):  
Visible Light ◽  
Electron Mobility ◽  
Impact Ionization ◽  
Light Emission ◽  
High Electron ◽  
High Electron Mobility ◽  
Visible Light Emission

Photoexcited hot electron relaxation processes in n-HgCdTe through impact ionization into traps

1991 ◽  
Author(s):  
D. G. Seiler ◽  
J. R. Lowney ◽  
C. L. Littler ◽  
I. T. Yoon ◽  
M. R. Loloee
Keyword(s):  
Impact Ionization ◽  
Relaxation Processes ◽  
Hot Electron ◽  
Electron Relaxation

Impact Ionization, Degradation, and Breakdown in SiO2

1992 ◽  
Vol 284 ◽  
Author(s):  
D. J. Dimaria ◽  
E. Cartier ◽  
D. Arnold
Keyword(s):  
Silicon Dioxide ◽  
Temperature Dependence ◽  
Impact Ionization ◽  
Charge Trapping ◽  
Oxide Thickness ◽  
Bandgap Energy ◽  
Strongly Correlated ◽  
Hot Electron ◽  
Defect Production ◽  
Oxide Degradation

ABSTRACTDestructive breakdown in silicon dioxide is shown to be strongly correlated to the oxide degradation caused by hot-electron-induced defect production and charge trapping ner the interfaces of the films. Two well defined transitions in the chargc-to-breakdown data as a function of field and oxide thickness are shown to coincide with the onset of mechanisms due to trap creation and impact ionization by electrons with energies exceeding 2 and 9 eV (the SiO2 bandgap energy), respectively. The temperature dependence of charge-to-breakdown is also shown to be consistent with that of these two defect-producing mechanisms.

Effect of Electric Field and Current Injection on the Main Electron Trap in Bulk GaAs

1980 ◽  
Vol 2 ◽  
Author(s):  
S. Makram–Ebeid
Keyword(s):  
Impact Ionization ◽  
Electron Trap ◽  
Hot Electron ◽  
Tunneling Model ◽  
Bulk Gaas ◽  
Low Field ◽  
Assisted Tunneling ◽  
High Fields ◽  
Franck Condon ◽  
Good Agreement

ABSTRACTThe dark capacitive transients related to the main electron trap in bulk and VPE GaAs have been studied in detail. The low temperature low field transients are induced by electrons injected from the metal counter electrode. Both hot electron capture and impact ionization effects are observed. At high fields, a phonon assisted tunneling model accounts for the observations and yields the values of the Franck Condon Shift Sw and the energy w of the phonon coupled to the level. These values are found to be in good agreement with other independent estimates.

Hot electron transport and impact ionization in the narrow energy gap InAs1−xNx alloy

2010 ◽  
Vol 96 (5) ◽  
pp. 052115 ◽  
Author(s):  
O. Makarovsky ◽  
W. H. M. Feu ◽  
A. Patanè ◽  
L. Eaves ◽  
Q. D. Zhuang ◽  
...  
Keyword(s):  
Electron Transport ◽  
Impact Ionization ◽  
Energy Gap ◽  
Hot Electron ◽  
Hot Electron Transport
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