Photoexcited hot electron relaxation processes in n-HgCdTe through impact ionization into traps

1991 ◽  
Author(s):  
D. G. Seiler ◽  
J. R. Lowney ◽  
C. L. Littler ◽  
I. T. Yoon ◽  
M. R. Loloee
Keyword(s):  
Impact Ionization ◽  
Relaxation Processes ◽  
Hot Electron ◽  
Electron Relaxation

HOT ELECTRON RELAXATION IN POLAR SEMICONDUCTORS

1988 ◽  
pp. 695-700
Author(s):  
S. Das Sarma ◽  
J.K. Jain ◽  
R. Jalabert
Keyword(s):  
Hot Electron ◽  
Electron Relaxation

scholarly journals Author Correction: Parametric dependence of hot electron relaxation timescales on electron-electron and electron-phonon interaction strengths

2020 ◽  
Vol 3 (1) ◽  
Author(s):  
Richard B. Wilson ◽  
Sinisa Coh
Keyword(s):  
Hot Electron ◽  
Phonon Interaction ◽  
Parametric Dependence ◽  
Electron Phonon Interaction ◽  
Electron Relaxation

A correction to this paper has been published: https://doi.org/10.1038/s42005-020-00499-8

Impact Ionization, Degradation, and Breakdown in SiO2

1992 ◽  
Vol 284 ◽  
Author(s):  
D. J. Dimaria ◽  
E. Cartier ◽  
D. Arnold
Keyword(s):  
Silicon Dioxide ◽  
Temperature Dependence ◽  
Impact Ionization ◽  
Charge Trapping ◽  
Oxide Thickness ◽  
Bandgap Energy ◽  
Strongly Correlated ◽  
Hot Electron ◽  
Defect Production ◽  
Oxide Degradation

ABSTRACTDestructive breakdown in silicon dioxide is shown to be strongly correlated to the oxide degradation caused by hot-electron-induced defect production and charge trapping ner the interfaces of the films. Two well defined transitions in the chargc-to-breakdown data as a function of field and oxide thickness are shown to coincide with the onset of mechanisms due to trap creation and impact ionization by electrons with energies exceeding 2 and 9 eV (the SiO2 bandgap energy), respectively. The temperature dependence of charge-to-breakdown is also shown to be consistent with that of these two defect-producing mechanisms.

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