Determination of the density of states of the conduction-band tail in hydrogenated amorphous silicon

1988 ◽  
Vol 38 (11) ◽  
pp. 7493-7510 ◽  
Author(s):  
C. Longeaud ◽  
G. Fournet ◽  
R. Vanderhaghen
Keyword(s):  
Amorphous Silicon ◽  
Conduction Band ◽  
Density Of States ◽  
Hydrogenated Amorphous Silicon ◽  
Band Tail ◽  
Hydrogenated Amorphous

scholarly journals Analytical Study of near Mobility Edge Density of States of Hydrogenated Amorphous Silicon

2014 ◽  
Vol 11 (3) ◽  
pp. 1243-1249
Author(s):  
Baghdad Science Journal
Keyword(s):  
Amorphous Silicon ◽  
Valence Band ◽  
Conduction Band ◽  
Density Of States ◽  
Power Law ◽  
Power Index ◽  
Hydrogenated Amorphous Silicon ◽  
Band Edge ◽  
Simple Power ◽  
Hydrogenated Amorphous

Experimental results for the density of states of hydrogenated amorphous silicon due to Jackson et al near the valence and conduction band edges were analyzed using Levenberg-Marquardt nonlinear fitting method. It is found that the density of states of the valence band and the conduction band can be fitted to a simple power law, with a power index 0.60 near the valence band edge, and 0.55 near the conduction band edge. These results indicate a modest but noticeable deviation from the square root law (power index=0.5) which is found in crystalline semiconductors. Analysis of Jackson et al density of states integral J(E) data over about (1.4 eV) of photon energy range, showed a significant fit to a simple power law with a power index of 2.11 close to that predicted from the density of states fitting results 2.15

Capacitance Studies of Light-Induced Effects in Undoped Hydrogenated Amorphous Silicon

1985 ◽  
Vol 49 ◽  
Author(s):  
K. Zellama ◽  
J.D. Cohen ◽  
J.P. Harbison
Keyword(s):  
Electrical Conductivity ◽  
Amorphous Silicon ◽  
Density Of States ◽  
Hydrogenated Amorphous Silicon ◽  
Dangling Bond ◽  
Light Saturation ◽  
Band Tail ◽  
Bond Density ◽  
Induced Changes ◽  
Hydrogenated Amorphous

AbstractThe effects of light saturation on the properties of undoped a-Si:H films were studied by a new capacitance profiling technique which can be used to directly determine changes in the dangling bond density of states near midgap. Coplanar conductivity and capacitance vs. temperature measurements save the changes in activation energies for electrical conductivity. These studies indicate that, while substantial increases in the dangling bond densities are observed for most samples, the detailed behavior of the light induced changes in these films are inconsistent with the creation of such defects by breaking weak valence band tail states.

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