Thermal stability of coevaporated Al‐Pt thin films on GaAs substrates

1990 ◽  
Vol 57 (4) ◽  
pp. 392-394 ◽  
Author(s):  
B. Blanpain ◽  
G. D. Wilk ◽  
J. O. Olowolafe ◽  
J. W. Mayer ◽  
L. R. Zheng
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Gaas Substrates ◽  
Thermal Stability Of

Thermal Stability of a1-pt Thin Films/Gaas for Self-Aligning Gate Contacts

1990 ◽  
Vol 181 ◽  
Author(s):  
G. D. Wilk ◽  
B. Blanpain ◽  
J. O. Olowolafe ◽  
J. W. Mayer ◽  
L. R. Zheng
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
High Temperature ◽  
Gaas Substrates ◽  
The Stability ◽  
Thermal Stability Of

ABSTRACTSeveral compositions of Al-Pt thin films have been co-evaporated on GaAs substrates to study the stability of the alloys at high-temperature anneals. The Al concentration in the alloys ranges from 45 at.% to 70 at.%, and we show that the films meet thermal stability requirements imposed by GaAs self-aligning gate technology for compositions between AlPt and Al2Pt.

Thermal Stability of A1-Pt Thin Films/GaAs for Self-Aligning Gate Contacts

1990 ◽  
Vol 184 ◽  
Author(s):  
G. D. Wilk ◽  
B. Blanpain ◽  
J. O. Olowolafe ◽  
J. W. Mayer ◽  
L. R. Zheng
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
High Temperature ◽  
Gaas Substrates ◽  
The Stability ◽  
Thermal Stability Of

ABSTRACTSeveral compositions of A1-Pt thin films have been co-evaporated on GaAs substrates to study the stability of the alloys at high-temperature anneals. The A1 concentration in the alloys ranges from 45 at.% to 70 at.%, and we show that the films meet thermal stability requirements imposed by GaAs selfaligning gate technology for compositions between AIPt and Al2Pt.

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

scholarly journals The role of the substrate on the mechanical and thermal stability of Pd thin films during hydrogen (de)sorption

2021 ◽  
Vol 46 (5) ◽  
pp. 4137-4153
Author(s):  
Neha Verma ◽  
Rob Delhez ◽  
Niek M. van der Pers ◽  
Frans D. Tichelaar ◽  
Amarante J. Böttger
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Thermal Stability Of

Effects of nitrogen ion implantation on the thermal stability of tungsten thin films

1998 ◽  
Vol 16 (2) ◽  
pp. 477-481 ◽  
Author(s):  
Yong Tae Kim ◽  
Chul Soon Kwon ◽  
Dong Joon Kim ◽  
Jong-Wan Park ◽  
Chang Woo Lee
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Ion Implantation ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion ◽  
Thermal Stability Of

Thermal stability of plasma deposited thin films of hydrogenated carbon–nitrogen alloys

1999 ◽  
Vol 86 (11) ◽  
pp. 6276-6281 ◽  
Author(s):  
J. V. Anguita ◽  
S. R. P. Silva ◽  
A. P. Burden ◽  
B. J. Sealy ◽  
S. Haq ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Thermal Stability Of
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