High quality hydrogenated amorphous silicon films by windowless hydrogen discharge

1990 ◽  
Vol 57 (5) ◽  
pp. 484-486 ◽  
Author(s):  
Akira Yoshida ◽  
Katsushi Inoue ◽  
Haruhiko Ohashi ◽  
Yoji Saito
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
High Quality ◽  
Hydrogen Discharge ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

Photoconductivity and trapping parameters in hydrogenated amorphous silicon films

1983 ◽  
Vol 9 (1-3) ◽  
pp. 295-300
Author(s):  
S. Galassini ◽  
G. Micocci ◽  
C. Pennetta ◽  
A. Rizzo ◽  
A. Tepore ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Hydrogenated Amorphous

Substrate temperature effect on the stability of hydrogenated amorphous silicon films deposited at high rates

1995 ◽  
Vol 78 (1) ◽  
pp. 317-320 ◽  
Author(s):  
J. P. Kleider ◽  
C. Longeaud ◽  
M. Barranco‐Diaz ◽  
P. Morin ◽  
P. Roca i Cabarrocas
Keyword(s):  
Substrate Temperature ◽  
Temperature Effect ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
The Stability ◽  
Hydrogenated Amorphous
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