Picosecond photoluminescence excitation spectroscopy of GaAs/AlGaAs quantum wells

1990 ◽  
Vol 57 (7) ◽  
pp. 704-706 ◽  
Author(s):  
M. R. Freeman ◽  
D. D. Awschalom ◽  
J. M. Hong
Keyword(s):  
Quantum Wells ◽  
Photoluminescence Excitation

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells

2017 ◽  
Vol 10 (2) ◽  
pp. 021002 ◽  
Author(s):  
Hideaki Murotani ◽  
Katsuto Nakamura ◽  
Tomonori Fukuno ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Excitation

The electronic structure of InGaAs/InP quantum wells measured by Fourier transform photoluminescence excitation spectroscopy

1996 ◽  
Vol 80 (12) ◽  
pp. 6855-6860 ◽  
Author(s):  
J. Dalfors ◽  
T. Lundström ◽  
P. O. Holtz ◽  
H. H. Radamson ◽  
B. Monemar ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Fourier Transform ◽  
Quantum Wells ◽  
Photoluminescence Excitation

Resonant photoluminescence excitation studies of InGaN/GaN single quantum wells

2006 ◽  
Vol 3 (6) ◽  
pp. 2001-2004 ◽  
Author(s):  
D. M. Graham ◽  
P. Dawson ◽  
M. J. Godfrey ◽  
M. J. Kappers ◽  
J. S. Barnard ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Photoluminescence Excitation ◽  
Single Quantum

Photoluminescence Excitation Spectroscopy of the Lasing Transition in Zn0.85Cd0.15Se-ZnS0.08Se0.92Multiple Quantum Wells

1993 ◽  
Vol 32 (Part 2, No. 5B) ◽  
pp. L730-L733 ◽  
Author(s):  
Yoichi Kawakami ◽  
Brian C. Cavenett ◽  
Kunio Ichino ◽  
Shizuo Fujita ◽  
Shigeo Fujita
Keyword(s):  
Quantum Wells ◽  
Photoluminescence Excitation

Fourier transform photoluminescence excitation spectroscopy of InGaAs/InP quantum wells

1995 ◽  
Vol 17 (4) ◽  
pp. 407 ◽  
Author(s):  
J. Dalfors ◽  
T. Lundström ◽  
P.O. Holtz ◽  
B. Monemar ◽  
J. Wallin ◽  
...  
Keyword(s):  
Fourier Transform ◽  
Quantum Wells ◽  
Photoluminescence Excitation

Observation of InGaAs / Inaias Surface Quantum Wells by Photoreflectance and Photoluminescence Excitation Spectroscopies

1993 ◽  
Vol 326 ◽  
Author(s):  
S. Moneger ◽  
C. Bru ◽  
T. Benyattou ◽  
G. Guillot ◽  
E. Tournie ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Photoluminescence Excitation
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