Shallow junction formation by dopant diffusion frominsitudoped polycrystalline silicon chemically vapor deposited in a rapid thermal processor

1990 ◽  
Vol 56 (18) ◽  
pp. 1778-1780 ◽  
Author(s):  
T. Y. Hsieh ◽  
H. G. Chun ◽  
D. L. Kwong ◽  
D. B. Spratt
Keyword(s):  
Polycrystalline Silicon ◽  
Dopant Diffusion ◽  
Shallow Junction ◽  
Junction Formation ◽  
Chemically Vapor Deposited

Using point defect engineering to reduce the effects of energy nonmonochromaticity of B ion beams on shallow junction formation

2004 ◽  
Vol 96 (1) ◽  
pp. 919-921 ◽  
Author(s):  
Lin Shao ◽  
John Chen ◽  
Jianming Zhang ◽  
D. Tang ◽  
Sanjay Patel ◽  
...  
Keyword(s):  
Point Defect ◽  
Ion Beams ◽  
Defect Engineering ◽  
Shallow Junction ◽  
Junction Formation

Shallow junction formation by preamorphization with tin implantation

1986 ◽  
Vol 49 (10) ◽  
pp. 575-577 ◽  
Author(s):  
M. Delfino ◽  
D. K. Sadana ◽  
A. E. Morgan
Keyword(s):  
Shallow Junction ◽  
Junction Formation

Gas immersion laser doping (GILD) for ultra-shallow junction formation

2004 ◽  
Vol 453-454 ◽  
pp. 106-109 ◽  
Author(s):  
G. Kerrien ◽  
T. Sarnet ◽  
D. Débarre ◽  
J. Boulmer ◽  
M. Hernandez ◽  
...  
Keyword(s):  
Shallow Junction ◽  
Laser Doping ◽  
Junction Formation
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