Determination of Γ electron and light hole effective masses in AlxGa1−xAs on the basis of energy gaps, band‐gap offsets, and energy levels in AlxGa1−xAs/GaAs quantum wells

1990 ◽  
Vol 56 (24) ◽  
pp. 2425-2427 ◽  
Author(s):  
Ľ. Hrivnák
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Energy Levels ◽  
Light Hole ◽  
Effective Masses ◽  
Energy Gaps

Nonspectroscopic approach to the determination of the chemical potential and band-gap renormalization in quantum wells

1992 ◽  
Vol 45 (15) ◽  
pp. 8535-8541 ◽  
Author(s):  
E. H. Böttcher ◽  
N. Kirstaedter ◽  
M. Grundmann ◽  
D. Bimberg ◽  
R. Zimmermann ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Chemical Potential

scholarly journals Contactless electroreflectance of GaN0.025As0.975−xSbx∕GaAs quantum wells with high Sb content (0.27⩽x⩽0.33): The determination of band gap discontinuity

2006 ◽  
Vol 89 (17) ◽  
pp. 171914 ◽  
Author(s):  
R. Kudrawiec ◽  
J. A. Gupta ◽  
M. Motyka ◽  
M. Gladysiewicz ◽  
J. Misiewicz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Gap

Determination of the Energy Levels of Paramagnetic Centers in the Band Gap of Nanostructured Oxide Semiconductors Using EPR Spectroscopy

2018 ◽  
Vol 122 (18) ◽  
pp. 10248-10254 ◽  
Author(s):  
Elizaveta A. Konstantinova ◽  
Anton A. Minnekhanov ◽  
Alexander I. Kokorin ◽  
Tatyana V. Sviridova ◽  
Dmitry V. Sviridov
Keyword(s):  
Band Gap ◽  
Epr Spectroscopy ◽  
Energy Levels ◽  
Paramagnetic Centers ◽  
Oxide Semiconductors ◽  
Nanostructured Oxide

Magneto-optic determination of the light-hole effective masses in InGaAs/GaAs strained-layer superlattices

1985 ◽  
Vol 55 (6) ◽  
pp. 525-527 ◽  
Author(s):  
E.D. Jones ◽  
H. Ackermann ◽  
J.E. Schirber ◽  
T.J. Drummond ◽  
L.R. Dawson ◽  
...  
Keyword(s):  
Light Hole ◽  
Strained Layer ◽  
Effective Masses ◽  
Strained Layer Superlattices ◽  
Magneto Optic

EuTe/PbTe Superlattices: Mbe Growth and Optical Characterization

1993 ◽  
Vol 301 ◽  
Author(s):  
G. Springholz ◽  
Shu Yuan ◽  
G. Bauer ◽  
M. Kriechbaum ◽  
H. Krenn
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Growth Parameters ◽  
Energy Levels ◽  
Wide Band ◽  
Growth Conditions ◽  
High Energy ◽  
Layer By Layer ◽  
Heteroepitaxial Growth ◽  
Mbe Growth

ABSTRACTThe heteroepitaxial growth of EuTe on PbTe (111) by molecular beam epitaxy (MBE) was investigated using in situ reflection high energy electron diffraction (RHEED). As a function of substrate temperature and Te2 flux rate, the resulting EuTe (111) surfaces exhibit several different surface reconstructions corresponding to Te-stabilized or Eu-stabilized surfaces. The Eustabilized surface shows a (2√3 × 2√3)R30° surface reconstruction. Because of the strain induced tendency for 3D islanding, only in a narrow window of MBE growth parameters perfect 2D layer-by-layer heteroepitaxial growth exists. Using such optimized MBE growth conditions, we have fabricated a series of PbTe/EuTe superlattices. In such superlattices the wide band gap EuTe layers act as barriers and the narrow band gap PbTe as quantum wells. The superlattices were investigated by high resolution x-ray diffraction, showing their high structural perfection. Modulated low temperature Fourier transform infrared reflection measurements were performed in order to determine the confined energy levels in the PbTe quantum wells. The measurements indicate that mini-subbands are formed in the PbTe quantum wells with a mini-band width of 22 meV in agreement with envelope function calculations.

Determination of band gap and effective masses in InAs/Ga1−xInxSb superlattices

1992 ◽  
Vol 61 (2) ◽  
pp. 207-209 ◽  
Author(s):  
J. P. Omaggio ◽  
J. R. Meyer ◽  
R. J. Wagner ◽  
C. A. Hoffman ◽  
M. J. Yang ◽  
...  
Keyword(s):  
Band Gap ◽  
Effective Masses

Electrical Properties of the Multilayer Structures Based on Ultrathin Diamond-Like Carbon Films

1996 ◽  
Vol 452 ◽  
Author(s):  
V. I. Polyakov ◽  
P. I. Perov ◽  
N. M. Rossukanyi ◽  
A. I. Rukovishnikov ◽  
A. V. Khomich ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Cross Sections ◽  
Deep Level ◽  
Energy Levels ◽  
Differential Resistance ◽  
Carbon Films ◽  
Multilayer Structures ◽  
Transient Spectra ◽  
Trapping Centers

AbstractThe electrical characteristics of multilayer structures based on amorphous ultrathin diamondlike carbon films were investigated including dynamic and quasi-static current-voltage characteristics, capacitance-voltage characteristics, deep level transient spectra. The effect of illumination and temperature on these characteristics was also investigated. For the multilayer structures composed of lower band gap amorphous carbon layers separated with higher band gap ones, there were observed well-defined regions of negative differential resistance and sharp 20-fold changes in capacitance at definite voltages. Activation energies, capture cross sections, and locations of trapping centers were defined. The effects observed are discussed in terms of trap-assisted tunneling and, also, in terms of resonant tunneling between energy levels in superlattices and charge filling of the quantum wells and trapping centers.

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