The molecular beam epitaxy growth of InGaAs on GaAs(100) studied by in situ scanning tunneling microscopy and reflection high-energy electron diffraction

1991 ◽  
Vol 9 (4) ◽  
pp. 2189 ◽  
Author(s):  
C. W. Snyder
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
High Energy ◽  
Scanning Tunneling ◽  
Molecular Beam Epitaxy Growth ◽  
High Energy Electron ◽  
Tunneling Microscopy

Surface Reconstructions of Strained Epitaxial CoSi2/Si(100) Layers Studied by Scanning Tunneling Microscopy.

1991 ◽  
Vol 237 ◽  
Author(s):  
R. Stalder ◽  
C. Schwarz ◽  
H. Sirringhaus ◽  
H. VON Känel
Keyword(s):  
Electron Diffraction ◽  
Scanning Tunneling Microscopy ◽  
High Energy ◽  
Real Space ◽  
Scanning Tunneling ◽  
High Energy Electron ◽  
Tunneling Microscopy ◽  
Detailed Surface ◽  
Surface Reconstructions

ABSTRACTEpitaxial single-domain CoSi2(100) layers were grown on Si(100) by use of a template technique. In-situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction (RHEED) were used for a detailed surface study. The (√2×√2)R45 reconstruction of the Co-rich “C-surface” and the (3√2×√2)R45 as well as a newly discovered (√2×√2)R45 of the Si-rich “S-surface” were resolved in real space and are discussed in detail. The transition from the C- to the S-surface above 500 °C is related to a (2×2) reconstruction.

Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy

1997 ◽  
Vol 36 (Part 1, No. 6B) ◽  
pp. 3810-3813 ◽  
Author(s):  
Reiko Kuroiwa ◽  
Hajime Asahi ◽  
Kakuya Iwata ◽  
Seong-Jin Kim ◽  
Joo-Hyong Noh ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Scanning Tunneling ◽  
Molecular Beam Epitaxy Growth ◽  
Tunneling Microscopy ◽  
Gas Source ◽  
Rich Side
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