Phase of reflection high-energy electron-diffraction intensity oscillations during molecular-beam-epitaxy growth of GaAs(100)

1989 ◽  
Vol 40 (17) ◽  
pp. 11799-11803 ◽  
Author(s):  
J. Resh ◽  
K. D. Jamison ◽  
J. Strozier ◽  
A. Bensaoula ◽  
A. Ignatiev
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
High Energy ◽  
Energy Electron ◽  
Molecular Beam Epitaxy Growth ◽  
High Energy Electron ◽  
Diffraction Intensity

Reflection High Energy Electron Diffraction Intensity Oscillations during the Growth of ZnSe on Cleaved GaAs(110) Surface by Molecular Beam Epitaxy

1996 ◽  
Vol 35 (Part 2, No. 3B) ◽  
pp. L366-L369 ◽  
Author(s):  
Hyun-Chul Ko ◽  
Shigeo Yamaguchi ◽  
Hitoshi Kurusu ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Diffraction Intensity
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