Double‐heterostructure GaAs/AlGaAs lasers on Si substrates with reduced threshold current and built‐in index guiding by selective‐area molecular beam epitaxy

1990 ◽  
Vol 56 (11) ◽  
pp. 1014-1016 ◽  
Author(s):  
Henry P. Lee ◽  
Xiaoming Liu ◽  
Shyh Wang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Threshold Current ◽  
Double Heterostructure ◽  
Si Substrates ◽  
Selective Area

Selective-Area Growth of GaN Nanowires on Patterned SiOx/Si Substrates by Molecular Beam Epitaxy

2020 ◽  
Vol 46 (11) ◽  
pp. 1080-1083
Author(s):  
V. O. Gridchin ◽  
K. P. Kotlyar ◽  
R. R. Reznik ◽  
L. N. Dvoretskaya ◽  
A. V. Parfen’eva ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

scholarly journals Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 366 ◽  
Author(s):  
Alexana Roshko ◽  
Matt Brubaker ◽  
Paul Blanchard ◽  
Todd Harvey ◽  
Kris Bertness
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Buffer Layers ◽  
Selective Area Growth ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth ◽  
Eutectic Formation

Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al–Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Eutectic related defects in the Si surface caused voids in N-polar samples, but not in metal-polar samples. Likewise, inversion domains were present in N-polar, but not metal-polar samples. The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG.

Cost-effective selective-area growth of GaN-based nanocolumns on silicon substrates by molecular-beam epitaxy

2019 ◽  
Vol 514 ◽  
pp. 124-129
Author(s):  
Yukun Zhao ◽  
Wenxian Yang ◽  
Shulong Lu ◽  
Yuanyuan Wu ◽  
Xin Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cost Effective ◽  
Silicon Substrates ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth
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