Characteristics of double-heterostructure GaAs/AlGaAs laser diodes on Si substrates by selective-area molecular-beam epitaxy

1990 ◽  
Vol 8 (2) ◽  
pp. 343 ◽  
Author(s):  
Henry P. Lee
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Double Heterostructure ◽  
Si Substrates ◽  
Selective Area

High‐peak‐power low‐threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration‐enhanced molecular beam epitaxy

1988 ◽  
Vol 53 (14) ◽  
pp. 1248-1250 ◽  
Author(s):  
Jae‐Hoon Kim ◽  
Akbar Nouhi ◽  
Gouri Radhakrishnan ◽  
John K. Liu ◽  
Robert J. Lang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Peak Power ◽  
Molecular Beam ◽  
Laser Diodes ◽  
High Peak ◽  
High Peak Power ◽  
Si Substrates ◽  
Low Threshold ◽  
Stripe Laser

InGaP/InGaAlP double‐heterostructure and multiquantum‐well laser diodes grown by molecular‐beam epitaxy

1987 ◽  
Vol 61 (5) ◽  
pp. 1713-1719 ◽  
Author(s):  
Hidenao Tanaka ◽  
Yuichi Kawamura ◽  
Shunji Nojima ◽  
Koichi Wakita ◽  
Hajime Asahi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Double Heterostructure ◽  
Multiquantum Well

Selective-Area Growth of GaN Nanowires on Patterned SiOx/Si Substrates by Molecular Beam Epitaxy

2020 ◽  
Vol 46 (11) ◽  
pp. 1080-1083
Author(s):  
V. O. Gridchin ◽  
K. P. Kotlyar ◽  
R. R. Reznik ◽  
L. N. Dvoretskaya ◽  
A. V. Parfen’eva ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

Monolithic integration of AlGaInP laser diodes on SiGe∕Si substrates by molecular beam epitaxy

2006 ◽  
Vol 100 (1) ◽  
pp. 013103 ◽  
Author(s):  
O. Kwon ◽  
J. J. Boeckl ◽  
M. L. Lee ◽  
A. J. Pitera ◽  
E. A. Fitzgerald ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Monolithic Integration ◽  
Si Substrates

scholarly journals Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 366 ◽  
Author(s):  
Alexana Roshko ◽  
Matt Brubaker ◽  
Paul Blanchard ◽  
Todd Harvey ◽  
Kris Bertness
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Buffer Layers ◽  
Selective Area Growth ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth ◽  
Eutectic Formation

Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al–Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Eutectic related defects in the Si surface caused voids in N-polar samples, but not in metal-polar samples. Likewise, inversion domains were present in N-polar, but not metal-polar samples. The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG.

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