Wet chemical etching of high‐temperature superconducting Y‐Ba‐Cu‐O films in ethylenediaminetetraacetic acid

1989 ◽  
Vol 55 (25) ◽  
pp. 2661-2663 ◽  
Author(s):  
F. K. Shokoohi ◽  
L. M. Schiavone ◽  
C. T. Rogers ◽  
A. Inam ◽  
X. D. Wu ◽  
...  
Keyword(s):  
High Temperature ◽  
Chemical Etching ◽  
Ethylenediaminetetraacetic Acid ◽  
High Temperature Superconducting ◽  
Wet Chemical ◽  
Wet Chemical Etching

Wet chemical etching method for BST thin films annealed at high temperature

2008 ◽  
Vol 254 (21) ◽  
pp. 6697-6700 ◽  
Author(s):  
R.T. Zhang ◽  
C.R. Yang ◽  
A. Yu ◽  
B. Wang ◽  
H.J. Tang ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Chemical Etching ◽  
Bst Thin Films ◽  
Etching Method ◽  
Wet Chemical ◽  
Wet Chemical Etching

The diffusion of hydrogen in silicon and mechanisms for “unintentional” hydrogenation during ion beam processing

1987 ◽  
Vol 2 (1) ◽  
pp. 96-106 ◽  
Author(s):  
C. H. Seager ◽  
R. A. Anderson ◽  
J. K. G. Panitz
Keyword(s):  
High Temperature ◽  
Chemical Etching ◽  
Reasonable Agreement ◽  
Ion Beam ◽  
Argon Ion Bombardment ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Boron Acceptor ◽  
Argon Ion ◽  
Diffusion Of Hydrogen

Experiments are described in which hydrogen is injected into silicon by various techniques and detected by the neutralization of boron acceptor sites. Wet chemical etching is shown to inject protons several microns in a few seconds; this experiment is used to set a lower limit on the diffusivity of hydrogen of ⋍2⊠10−11 cm2/s at 300 K, a number in reasonable agreement with prior estimates deduced by Van Wieririgen and Warmholtz from high-temperature permeation measurements. A number of experiments are reported to elucidate the mechanism for “unintentional” hydrogenation occurring during argon ion bombardment. The data suggest that this effect is caused by bombardment-induced injection of hydrogen from surface H2O/hydrocarbon contaminants.

Decapsulation Techniques for Cu Wire Bonding Package

2009 ◽  
Author(s):  
Dongmei Meng ◽  
Joe Rupley ◽  
Chris McMahon
Keyword(s):  
Laser Ablation ◽  
Thin Layer ◽  
Chemical Etching ◽  
Wire Bonding ◽  
Methods And Techniques ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Reliability Issue ◽  
Etch Time ◽  
Device Technology

Abstract This paper presents decapsulation solutions for devices bonded with Cu wire. By removing mold compound to a thin layer using a laser ablation tool, Cu wire bonded packages are decapsulated using wet chemical etching by controlling the etch time and temperature. Further, the paper investigates the possibilities of decapsulating Cu wire bonded devices using full wet chemical etches without the facilitation of laser ablation removing much of mold compound. Additional discussion on reliability concerns when evaluating Cu wirebond devices is addressed here. The lack of understanding of the reliability of Cu wire bonded packages creates a challenge to the FA engineer as they must develop techniques to help understanding the reliability issue associated with Cu wire bonding devices. More research and analysis are ongoing to develop appropriate analysis methods and techniques to support the Cu wire bonding device technology in the lab.

scholarly journals Controlling the Facet of ZnO during Wet Chemical Etching Its (0001) O‐Terminated Surface

Small ◽  
2020 ◽  
Vol 16 (51) ◽  
pp. 2007045
Author(s):  
Mei Sun ◽  
Bocheng Yu ◽  
Mengyu Hong ◽  
Zhiwei Li ◽  
Fengjiao Lyu ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Wet Chemical ◽  
Wet Chemical Etching

scholarly journals In Situ Study of the Wet Chemical Etching of SiO2 and Nanoparticle@SiO2 Core–Shell Nanospheres

2021 ◽  
Author(s):  
Albert Grau-Carbonell ◽  
Sina Sadighikia ◽  
Tom A. J. Welling ◽  
Relinde J. A. van Dijk-Moes ◽  
Ramakrishna Kotni ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Core Shell ◽  
In Situ Study ◽  
Wet Chemical ◽  
Wet Chemical Etching

Controllable end shape modification of ZnO nano-arrays/rods by a simple wet chemical etching technique

2015 ◽  
Vol 48 (36) ◽  
pp. 365303 ◽  
Author(s):  
Jingchang Sun ◽  
Ting Zhao ◽  
Zhangwei Ma ◽  
Ming Li ◽  
Cheng Chang ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Shape Modification ◽  
Etching Technique ◽  
Wet Chemical ◽  
Wet Chemical Etching
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