ChemInform Abstract: High-Temperature Wet Chemical Etching of Ta2O5 in NaOH-Based Solutions for Fabricating Antiresonant Reflecting Optical Waveguides.

ChemInform ◽  
2010 ◽  
Vol 29 (21) ◽  
pp. no-no
Author(s):  
M. J. CHUANG ◽  
K. Y. HSIEH ◽  
A. K. CHU
1989 ◽  
Vol 55 (25) ◽  
pp. 2661-2663 ◽  
Author(s):  
F. K. Shokoohi ◽  
L. M. Schiavone ◽  
C. T. Rogers ◽  
A. Inam ◽  
X. D. Wu ◽  
...  

2008 ◽  
Vol 254 (21) ◽  
pp. 6697-6700 ◽  
Author(s):  
R.T. Zhang ◽  
C.R. Yang ◽  
A. Yu ◽  
B. Wang ◽  
H.J. Tang ◽  
...  

1987 ◽  
Vol 2 (1) ◽  
pp. 96-106 ◽  
Author(s):  
C. H. Seager ◽  
R. A. Anderson ◽  
J. K. G. Panitz

Experiments are described in which hydrogen is injected into silicon by various techniques and detected by the neutralization of boron acceptor sites. Wet chemical etching is shown to inject protons several microns in a few seconds; this experiment is used to set a lower limit on the diffusivity of hydrogen of ⋍2⊠10−11 cm2/s at 300 K, a number in reasonable agreement with prior estimates deduced by Van Wieririgen and Warmholtz from high-temperature permeation measurements. A number of experiments are reported to elucidate the mechanism for “unintentional” hydrogenation occurring during argon ion bombardment. The data suggest that this effect is caused by bombardment-induced injection of hydrogen from surface H2O/hydrocarbon contaminants.


Author(s):  
Dongmei Meng ◽  
Joe Rupley ◽  
Chris McMahon

Abstract This paper presents decapsulation solutions for devices bonded with Cu wire. By removing mold compound to a thin layer using a laser ablation tool, Cu wire bonded packages are decapsulated using wet chemical etching by controlling the etch time and temperature. Further, the paper investigates the possibilities of decapsulating Cu wire bonded devices using full wet chemical etches without the facilitation of laser ablation removing much of mold compound. Additional discussion on reliability concerns when evaluating Cu wirebond devices is addressed here. The lack of understanding of the reliability of Cu wire bonded packages creates a challenge to the FA engineer as they must develop techniques to help understanding the reliability issue associated with Cu wire bonding devices. More research and analysis are ongoing to develop appropriate analysis methods and techniques to support the Cu wire bonding device technology in the lab.


Small ◽  
2020 ◽  
Vol 16 (51) ◽  
pp. 2007045
Author(s):  
Mei Sun ◽  
Bocheng Yu ◽  
Mengyu Hong ◽  
Zhiwei Li ◽  
Fengjiao Lyu ◽  
...  

Author(s):  
Albert Grau-Carbonell ◽  
Sina Sadighikia ◽  
Tom A. J. Welling ◽  
Relinde J. A. van Dijk-Moes ◽  
Ramakrishna Kotni ◽  
...  

2015 ◽  
Vol 48 (36) ◽  
pp. 365303 ◽  
Author(s):  
Jingchang Sun ◽  
Ting Zhao ◽  
Zhangwei Ma ◽  
Ming Li ◽  
Cheng Chang ◽  
...  

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