High‐power fundamental mode AlGaAs quantum well channeled substrate laser grown by molecular beam epitaxy

1989 ◽  
Vol 55 (11) ◽  
pp. 1059-1061 ◽  
Author(s):  
H. Jaeckel ◽  
H. P. Meier ◽  
G. L. Bona ◽  
W. Walter ◽  
D. J. Webb ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Power ◽  
Fundamental Mode ◽  
Molecular Beam

High‐power single‐mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates

1990 ◽  
Vol 56 (20) ◽  
pp. 1939-1941 ◽  
Author(s):  
D. J. Arent ◽  
L. Brovelli ◽  
H. Jäckel ◽  
E. Marclay ◽  
H. P. Meier
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Power ◽  
Molecular Beam ◽  
Single Mode ◽  
Single Quantum ◽  
Single Quantum Well

High power AlGaAs quantum well laser diodes prepared by molecular beam epitaxy

1993 ◽  
Vol 63 (13) ◽  
pp. 1718-1720 ◽  
Author(s):  
T. Hayakawa ◽  
K. Matsumoto ◽  
M. Morishima ◽  
M. Nagai ◽  
H. Horie ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Power ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Quantum Well Laser

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well
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