High power AlGaAs quantum well laser diodes prepared by molecular beam epitaxy

1993 ◽  
Vol 63 (13) ◽  
pp. 1718-1720 ◽  
Author(s):  
T. Hayakawa ◽  
K. Matsumoto ◽  
M. Morishima ◽  
M. Nagai ◽  
H. Horie ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Power ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Quantum Well Laser

Solid source molecular beam epitaxy growth of 600-nm-range quantum well laser diodes

1999 ◽  
Vol 201-202 ◽  
pp. 877-881 ◽  
Author(s):  
M Toivonen ◽  
P Savolainen ◽  
S Orsila ◽  
V Vilokkinen ◽  
M Pessa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Molecular Beam Epitaxy Growth ◽  
Quantum Well Laser ◽  
Nm Range

Near Room Temperature CW Operation of 660 nm Visible AlGaAs Multi-Quantum-Well Laser Diodes Grown by Molecular Beam Epitaxy

1985 ◽  
Vol 24 (Part 2, No. 12) ◽  
pp. L911-L913 ◽  
Author(s):  
Hidetoshi Iwamura ◽  
Tadashi Saku ◽  
Yoshiro Hirayama ◽  
Yoshifumi Suzuki ◽  
Hiroshi Okamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Cw Operation ◽  
Multi Quantum Well

InGaN multiple quantum well laser diodes grown by molecular beam epitaxy

2004 ◽  
Vol 40 (1) ◽  
pp. 33 ◽  
Author(s):  
S.E. Hooper ◽  
M. Kauer ◽  
V. Bousquet ◽  
K. Johnson ◽  
J.M. Barnes ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser

Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy

2009 ◽  
Vol 26 (1) ◽  
pp. 014214 ◽  
Author(s):  
Wang Hai-Li ◽  
Wu Dong-Hai ◽  
Wu Bing-peng ◽  
Ni Hqiao-Qiao ◽  
Huang She-Song ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Ingaas Quantum Well
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