Heteroepitaxial growth and characterization of GaAs on silicon‐on‐sapphire and sapphire substrates

1989 ◽  
Vol 54 (17) ◽  
pp. 1687-1689 ◽  
Author(s):  
T. P. Humphreys ◽  
C. J. Miner ◽  
J. B. Posthill ◽  
K. Das ◽  
M. K. Summerville ◽  
...  
Keyword(s):  
Heteroepitaxial Growth ◽  
Sapphire Substrates

Heteroepitaxial growth and characterization of monocrystal anatase TiO2 films on epi-GaN (0001)/sapphire substrates

2016 ◽  
Vol 52 (2) ◽  
pp. 1082-1088
Author(s):  
Wei Zhao ◽  
Xianjin Feng ◽  
Caina Luan ◽  
Hongdi Xiao ◽  
Jin Ma
Keyword(s):  
Anatase Tio2 ◽  
Tio2 Films ◽  
Heteroepitaxial Growth ◽  
Sapphire Substrates

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

AlxGa1-xN-Based Materials and Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
X. Zhang ◽  
R. Lavado ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Bragg Reflectors ◽  
X Ray Diffraction ◽  
Chemical Vapor Deposition Growth ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Dimensional Electron Gas ◽  
P Type

ABSTRACTWe present the metalorganic chemical vapor deposition growth, n-type and p-type doping and characterization of AlxGa1-xN alloys on sapphire substrates. We report the fabrication of Bragg reflectors and the demonstration of two dimensional electron gas structures using AlxGa1-xN high quality films. We report the structural characterization of the AlxGa1-xN / GaN multilayer structures and superlattices through X-ray diffraction and transmission electron microscopy. A density of screw and mixed threading dislocations as low as 107 cm-2 was estimated in AlxGa1-xN / GaN structures. The realization of AlxGa1-xN based UV photodetectors with tailored cut-off wavelengths from 365 to 200 nm are presented.

Photoluminescence Excitation Spectroscopy of Carbon-Doped Gallium Nitride

1998 ◽  
Vol 537 ◽  
Author(s):  
E. E. Reuter ◽  
R. Zhang ◽  
T. F. Kuech ◽  
S. G. Bishop
Keyword(s):  
Complete Characterization ◽  
Photoluminescence Excitation ◽  
Yellow Luminescence ◽  
Broad Excitation Band ◽  
Carbon Doped ◽  
Sapphire Substrates ◽  
Red Luminescence ◽  
Unusual Shape

AbstractWe have done a comparative study of carbon-doped GaN and undoped GaN utilizing photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies in order to investigate deep levels involved in yellow luminescence (YL) and red luminescence (RL). When the GaN was excited by above-bandgap light, red luminescence (RL) centered at 1.82 eV was the dominant below-gap PL from undoped GaN, but carbon-doped GaN below-gap PL was dominated by yellow luminescence (YL) centered at 2.2 eV. When exciting PL below the band-gap with 2.4 eV light, undoped GaN had a RL peak centered at 1.5 eV and carbon-doped GaN had a RL peak centered at 1.65 eV. PLE spectra of carbon-doped GaN, detecting at 1.56 eV, exhibited a strong, broad excitation band extending from about 2.1 to 2.8 eV with an unusual shape that may be due to two or more overlapping excitation bands. This RL PLE band was not observed in undoped GaN. We also demonstrate that PL spectra excited by below gap light in GaN films on sapphire substrates are readily contaminated by 1.6-1.8 eV and 2.1-2.5 eV chromium-related emission from the substrate. A complete characterization of the Cr emission and excitation bands for sapphire substrates enables the determination of the excitation and detection wavelengths required to obtain GaN PL and PLE spectra that are free of contributions from substrate emission.

Raman scattering characterization of well-aligned IrO2 nanocrystals grown on sapphire substrates via reactive sputtering

2006 ◽  
Vol 37 (12) ◽  
pp. 1411-1415 ◽  
Author(s):  
Alexandru Korotcov ◽  
Hung-Pin Hsu ◽  
Ying-Sheng Huang ◽  
Dah-Shyang Tsai
Keyword(s):  
Raman Scattering ◽  
Reactive Sputtering ◽  
Sapphire Substrates

Growth and crystallographic characterization of molecular beam epitaxial WO3 and MoO3/WO3 thin films on sapphire substrates

2016 ◽  
Vol 381 ◽  
pp. 32-35 ◽  
Author(s):  
Mitsuaki Yano ◽  
Kazuto Koike ◽  
Masayuki Matsuo ◽  
Takayuki Murayama ◽  
Yoshiyuki Harada ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Sapphire Substrates ◽  
Wo3 Thin Films
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