Raman scattering characterization of well-aligned IrO2 nanocrystals grown on sapphire substrates via reactive sputtering

2006 ◽  
Vol 37 (12) ◽  
pp. 1411-1415 ◽  
Author(s):  
Alexandru Korotcov ◽  
Hung-Pin Hsu ◽  
Ying-Sheng Huang ◽  
Dah-Shyang Tsai
Keyword(s):  
Raman Scattering ◽  
Reactive Sputtering ◽  
Sapphire Substrates

scholarly journals Raman scattering characterization of well-aligned RuO2nanocrystals grown on sapphire substrates

2007 ◽  
Vol 9 (5) ◽  
pp. 130-130 ◽  
Author(s):  
Y M Chen ◽  
A Korotcov ◽  
H P Hsu ◽  
Y S Huang ◽  
D S Tsai
Keyword(s):  
Raman Scattering ◽  
Sapphire Substrates

Raman Scattering Characterization of Strain in GaAs Heteroepitaxial Films Grown on Sapphire and Silicon-on-Sapphire Substrates

1989 ◽  
Vol 28 (Part 2, No. 9) ◽  
pp. L1595-L1598 ◽  
Author(s):  
T. P. Humphreys ◽  
J. B. Posthill ◽  
K. Das ◽  
C. A. Sukow ◽  
R. J. Nemanichi ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Sapphire Substrates

Characterization of CuAlO2Thin Films Prepared on Sapphire Substrates by Reactive Sputtering and Annealing

2008 ◽  
Vol 47 (1) ◽  
pp. 592-595 ◽  
Author(s):  
Nozomu Tsuboi ◽  
Tomohiro Moriya ◽  
Satoshi Kobayashi ◽  
Hidehiko Shimizu ◽  
Keizo Kato ◽  
...  
Keyword(s):  
Reactive Sputtering ◽  
Sapphire Substrates

Preparation and characterization of thin films of carbon nitride

1995 ◽  
Vol 53 ◽  
pp. 104-105
Author(s):  
L. Wan ◽  
R. F. Egerton
Keyword(s):  
Carbon Nitride ◽  
Arc Discharge ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Reactive Sputtering ◽  
Vacuum Arc ◽  
Specimen Preparation ◽  
Bonding Structure ◽  
Electron Energy Loss

INTRODUCTION Recently, a new compound carbon nitride (CNx) has captured the attention of materials scientists, resulting from the prediction of a metastable crystal structure β-C3N4. Calculations showed that the mechanical properties of β-C3N4 are close to those of diamond. Various methods, including high pressure synthesis, ion beam deposition, chemical vapor deposition, plasma enhanced evaporation, and reactive sputtering, have been used in an attempt to make this compound. In this paper, we present the results of electron energy loss spectroscopy (EELS) analysis of composition and bonding structure of CNX films deposited by two different methods.SPECIMEN PREPARATION Specimens were prepared by arc-discharge evaporation and reactive sputtering. The apparatus for evaporation is similar to the traditional setup of vacuum arc-discharge evaporation, but working in a 0.05 torr ambient of nitrogen or ammonia. A bias was applied between the carbon source and the substrate in order to generate more ions and electrons and change their energy. During deposition, this bias causes a secondary discharge between the source and the substrate.

Heteroepitaxial growth and characterization of GaAs on silicon‐on‐sapphire and sapphire substrates

1989 ◽  
Vol 54 (17) ◽  
pp. 1687-1689 ◽  
Author(s):  
T. P. Humphreys ◽  
C. J. Miner ◽  
J. B. Posthill ◽  
K. Das ◽  
M. K. Summerville ◽  
...  
Keyword(s):  
Heteroepitaxial Growth ◽  
Sapphire Substrates

Raman scattering characterization of group III-nitride epitaxial layers including cubic phase

1998 ◽  
Vol 189-190 ◽  
pp. 435-438 ◽  
Author(s):  
Hiroshi Harima ◽  
Toshiaki Inoue ◽  
Shin-ichi Nakashima ◽  
Hajime Okumura ◽  
Yuuki Ishida ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Cubic Phase ◽  
Epitaxial Layers ◽  
Group Iii ◽  
Group Iii Nitride
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