Gain‐loss model for the dependence of the stimulated‐emission transition in AlGaAs‐GaAs quantum well heterostructures on photoexcitation geometry

1989 ◽  
Vol 54 (25) ◽  
pp. 2518-2520 ◽  
Author(s):  
B. A. Vojak ◽  
N. Holonyak
Keyword(s):  
Quantum Well ◽  
Stimulated Emission ◽  
Loss Model ◽  
Emission Transition ◽  
Gain Loss

Light Emission Properties of GaN-Based Double Heterostructures and Quantum Wells

1995 ◽  
Vol 395 ◽  
Author(s):  
D.A.S. Loeber ◽  
J.M. Redwing ◽  
N.G. Anderson ◽  
M.A. Tischler
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Stimulated Emission ◽  
Pump Light ◽  
Band Edge Emission ◽  
Emission Characteristics ◽  
Nitrogen Laser ◽  
Edge Emission ◽  
Edge Luminescence ◽  
Double Heterostructures

ABSTRACTEdge emission characteristics of optically pumped GaN-AlGaN double heterostructures and quantum wells are examined. The samples, which were grown by metalorganic vapor phase epitaxy, are photoexcited with light from a pulsed nitrogen laser. The pump light is focused to a narrow stripe on the sample surface, oriented perpendicular to a cleaved edge, and the edge luminescence is collected and analyzed. We first compare emission characteristics of highly excited GaN-AlGaN double heterostructures grown simultaneously on SiC and sapphire substrates. Polarization resolved spectral properties of edge luminescence from both structures is studied as a function of pump intensity and excitation stripe length. Characteristics indicative of stimulated emission are observed, particularly in the sample grown on SiC. We then present results demonstrating laser emission from a GaN-AlGaN separate-confinement quantum-well heterostructure. At high pump intensities, band edge emission from the quantum well exhibits five narrow (∼1 Å) modes which are evenly spaced by 10Å to within the resolution of the spectrometer. This represents the first demonstration of laser action in a GaN-based quantum-well structure.

Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device

1995 ◽  
Vol 34 (11B) ◽  
pp. L1517 ◽  
Author(s):  
Isamu Akasaki ◽  
Hiroshi Amano ◽  
Shigetoshi Sota ◽  
Hiromitsu Sakai ◽  
Toshiyuki Tanaka ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Injection ◽  
Stimulated Emission

Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures

2000 ◽  
Vol 77 (23) ◽  
pp. 3758-3760 ◽  
Author(s):  
Chii-Chang Chen ◽  
Hui-Wen Chuang ◽  
Gou-Chung Chi ◽  
Chang-Cheng Chuo ◽  
Jen-Inn Chyi
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Emission Spectra ◽  
Indium Content ◽  
Stimulated Emission ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
High Indium Content

High-Power Low-Threshold Optically Pumped Type-ll Quantum-Well Lasers

1997 ◽  
Vol 484 ◽  
Author(s):  
Chih-Hsiang Lin ◽  
S. J. Murry ◽  
Rui Q. Yang ◽  
S. S. Pei ◽  
H. Q. Le ◽  
...  
Keyword(s):  
Quantum Well ◽  
Output Power ◽  
Optical Pumping ◽  
Internal Quantum Efficiency ◽  
Characteristic Temperature ◽  
Stimulated Emission ◽  
Free Carrier Absorption ◽  
Type Ii ◽  
Optically Pumped ◽  
Internal Loss

AbstractStimulated emission in InAs/InGaSb/InAs/AlSb type-II quantum-well (QW) lasers was observed up to room temperature at 4.5 μm, optically pumped by a pulsed 2-μm Tm:YAG laser. The absorbed threshold peak pump intensity was only 1.1 kW/cm2 at 300 K, with a characteristic temperature T0 of 61.6 K for temperatures up to 300 K. We will also study the effects of internal loss on the efficiency and output power for type-II QW lasers via optical pumping. Using a 0.98-μm InGaAs linear diode array, the devices exhibited an internal quantum efficiency of 67% at temperatures up to 190 K, and was capable of < 1. 1-W peak output power per facet in 6-μs pulses at 85 K. The internal loss of the devices exhibited an increase from 18 cm−1 near 70 K to ∼ 60–100 cm−1 near 180 K, which was possibly due to inter-valence band free carrier absorption.

Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device

1995 ◽  
Vol 34 (Part 2, No. 11B) ◽  
pp. L1517-L1519 ◽  
Author(s):  
Isamu Akasaki ◽  
Hiroshi Amano ◽  
Shigetoshi Sota ◽  
Hiromitsu Sakai ◽  
Toshiyuki Tanaka ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Injection ◽  
Stimulated Emission
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