Tensile stress variations of chemically etched GaAs films grown on Si substrates

1988 ◽  
Vol 53 (24) ◽  
pp. 2394-2396 ◽  
Author(s):  
Henry P. Lee ◽  
Xiaoming Liu ◽  
Hong Lin ◽  
John S. Smith ◽  
Shyh Wang ◽  
...  
Keyword(s):  
Tensile Stress ◽  
Si Substrates ◽  
Gaas Films ◽  
Stress Variations

The Photoluminescence and TEM Studies of Patterned GaAs films on Si Substrate Grown by Molecular Beam Epitaxy

1988 ◽  
Vol 116 ◽  
Author(s):  
Henry P. Lee ◽  
Yi-He Huang ◽  
Xiaoming Liu ◽  
Hong Lin ◽  
John. S. Smith ◽  
...  
Keyword(s):  
Tensile Stress ◽  
Uniaxial Stress ◽  
Luminescence Spectra ◽  
Residual Tensile Stress ◽  
Photoluminescence Intensity ◽  
Patterned Substrate ◽  
Si Substrates ◽  
Gaas Films ◽  
Patterned Films ◽  
Window Area

AbstractPatterned epitaxial GaAs films have been formed on Si substrates by either growth over patterned substrate (selective -area epitaxy) or chemical etching of patterns after growth. The optical properties of these samples are studied by 77K photoluminescence (PL) and the defect structures are investigated by transmission electron microscope (TEM). The patterned substrate consisted of bare Si stripes with width ranging from 10 µm to 100 µm surrounded by Si3N4 films on both sides and a reference area of bare Si. For 1.5 µmiann d 3 µm thick films, PL intensities from the films inside the 10 µm stripe shows 140% and 75% increase over unpatterned areas while the residual tensile stress in the patterned films is very similar to that of the unpatterned area. The increase in the photoluminescence intensity is ascribed to the reduction of crystalline defects inside the the window area. In the chemically etched sample, the pattern consisted of 4 µm by 4 µm squares and 1 mm long stripes with widths ranging from 100 µm to 4 plm. From the shift of PL peaks, a monotonic decrease in the tensile stress versus stripe width is observed. In particular, when the width of the stripe is less than 7 µm. tensile stress becomes essentially uniaxial in agreement with the results obtained by Yacobi et al [16] on a GaAs on InP sample. The polarization of the luminescence spectra parallel and perpendicular to the uniaxial stress of a 4 µm wide stripe agrees well with theoretical prediction. It is also observed that tensile stress is almost completely relieved in the 4 µm by 4 muentc hed squares.

Residual Stress in GaAs Layer Grown on 4°-Off (100)Si by MBE

1987 ◽  
Vol 91 ◽  
Author(s):  
T. Yao ◽  
Y. Okada ◽  
H. Kawanami ◽  
S. Matsui ◽  
A. Imagawa ◽  
...  
Keyword(s):  
Residual Stress ◽  
Tensile Stress ◽  
Gaas Layer ◽  
Residual Tensile Stress ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
Misfit Stress ◽  
Si Substrates ◽  
Gaas Films ◽  
Semiconductor Laser Diodes

ABSTRACTResidual stress in molecular beam epitaxially (MBE) grown GaAs films on 4°-off (100)Si substrates is investigated with X-ray diffraction technique. It is experimentally confirmed that the GaAs lattice suffers tetragonal deformation with the c-axis being [100]. The GaAs lattice tilts by approximately 0.2° towards the tilted direction of the substrate. It is found that two-dimensional compressive stress dominates in GaAs films thinner than 0.3 μm in thickness, while two-dimensional tensile stress dominates in thicker films. The variation of the stress is understood in terms of a combination of misfit stress and thermal stress. The residual tensile stress is larger than 1 × 109 dyn/cm2 in the films thicker than I pm. The effect of the stress on the reliability of semiconductor laser diodes is discussed.

Cu concentration dependence of the mechanical behaviour of Al-Cu alloys

1999 ◽  
Vol 564 ◽  
Author(s):  
J. P. Lokker ◽  
R. S. A. van Winden ◽  
A. M. Janssen ◽  
S. Radelaar
Keyword(s):  
Thin Films ◽  
Tensile Stress ◽  
Mechanical Behaviour ◽  
Precipitation Hardening ◽  
Solid Solution Hardening ◽  
Isothermal Hold ◽  
Solution Hardening ◽  
Stress Increase ◽  
Si Substrates ◽  
Cu Alloys

AbstractThis paper reports on the influence of the copper concentration on the mechanical behaviour during thermal cycling and during isothermal holds of Al-Cu thin films on Si substrates. The Cu concentration has been varied in the range between 0 to 1 at.%Upon heating, the films with the larger amount of Cu showed a clear maximum in compressive stress. Moreover, during cooling these samples show a tensile stress increase at the onset precipitation temperature. Further cooling below 200 °C leads to the characteristic tensile stress increase often observed for Al-Cu thin films. An isothermal hold during cooling at 250 °C leads to temporary strengthening of all Al-Cu. The extent of the strengthening is dependent on the Cu concentration and is clearly dependent on the duration of the isothermal hold. Upon further cooling the strengthening disappears and the stress develops according to the original stress temperature dependence. The observations are discussed in terms of solid solution hardening and precipitation hardening.

Observation of GaAs/Si Epitaxial Interfaces by Atomic Resolution Electron Microscopy

1986 ◽  
Vol 67 ◽  
Author(s):  
N. Otsuka ◽  
C. Choi ◽  
Y. Nakamura ◽  
S. Nagakura ◽  
R. Fischer ◽  
...  
Keyword(s):  
Substrate Surface ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Si Substrates ◽  
Voltage Electron ◽  
Resolution Electron ◽  
Gaas Films ◽  
Substrate Surfaces

ABSTRACTRecent studies have shown that high quality GaAs films can be grown by MBE on Si substrates whose surfaces are slightly tilted from the (100) plane. In order to investigate the effect of the tilting of substrate surfaces on the formation of threading dislocations, the GaAs/Si epitaxial interfaces have been observed with a 1 MB ultra-high vacuum, high voltage electron microscope. Two types of misfit dislocations, one with Burgers vectors parallel to the interface and the other with Burgers vectors inclined from the interface, were found in these epitaxial interfaces. The observation of crosssectional samples perpendicular to each other has shown that the tilting of the substrate surface directly influences the generation of these two types of misfit dislocations. The mechanism of the reduction of threading dislocations by the tilting of the substrate surface is discussed based on these observations.

Implantation Energy Selection in Molecular Beam Epitaxy GaAs Films on Si Substrates

1991 ◽  
Vol 8 (3) ◽  
pp. 149-152
Author(s):  
Xiao Guangming ◽  
Yin Shiduan ◽  
Zhang Jingping ◽  
Ding Aiju ◽  
Dong Aihua ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Implantation Energy ◽  
Si Substrates ◽  
Gaas Films

Molecular Beam Epitaxial Growth and Characterization of GaAs Films on Thin Si Substrates

1998 ◽  
Vol 37 (Part 1, No. 1) ◽  
pp. 39-44 ◽  
Author(s):  
Kenzo Maehashi ◽  
Hisao Nakashima ◽  
Frank Bertram ◽  
Peter Veit ◽  
Jürgen Christen
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Si Substrates ◽  
Molecular Beam Epitaxial ◽  
Gaas Films ◽  
Molecular Beam Epitaxial Growth

scholarly journals Impact of LT-GaAs layers on crystalline properties of the epitaxial GaAs films grown by MBE on Si substrates

2016 ◽  
Vol 741 ◽  
pp. 012020 ◽  
Author(s):  
M O Petrushkov ◽  
M A Putyato ◽  
A K Gutakovsky ◽  
V V Preobrazhenskii ◽  
I D Loshkarev ◽  
...  
Keyword(s):  
Epitaxial Gaas ◽  
Si Substrates ◽  
Gaas Films ◽  
Lt Gaas

Etching Technique to Reveal Dislocations in Thin GaAs Films Grown on Si Substrates

1988 ◽  
Vol 27 (Part 2, No. 2) ◽  
pp. L159-L160 ◽  
Author(s):  
Hironobu Nishikawa ◽  
Tetsuo Soga ◽  
Nobuo Mikuriya ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
Etching Technique ◽  
Si Substrates ◽  
Gaas Films

Crosshatch patterns in GaAs films on Si substrates due to thermal strain in annealing processes

1987 ◽  
Vol 51 (23) ◽  
pp. 1928-1930 ◽  
Author(s):  
Takashi Nishioka ◽  
Yoshio Itoh ◽  
Akio Yamamoto ◽  
Masafumi Yamaguchi
Keyword(s):  
Thermal Strain ◽  
Si Substrates ◽  
Gaas Films

Mechanical Properties of Boron Doped Si and Si/SiO 2 Membranes

2002 ◽  
Vol 729 ◽  
Author(s):  
Gabe Kuhn ◽  
Todd Myers ◽  
Susmita Bose ◽  
Amit Bandyopadhyay
Keyword(s):  
Tensile Stress ◽  
Boron Concentration ◽  
Boron Doping ◽  
Residual Tensile Stress ◽  
Flexural Mode ◽  
Si Substrates ◽  
Boron Doped ◽  
Pzt Film ◽  
Processing Variables ◽  
Etch Stop

AbstractIn our research, PZT film actuated micro-machined Si substrates are being developed for numerous applications in which membranes are actuated primarily in flexural mode. Silicon wafers, 3-inches in diameter, underwent boron doping in order to act as an etch stop. Approximately 200-nm of SiO2 was grown on the boron-doped side of the wafers. Photolithography and backside etching using EDP resulted in 2-μm thick membranes. Using reactive ion etching (RIE), beam structures resulted from the membranes. Nano-mechanical testing of the beams indicated that there were substantial residual tensile stresses in these structures. Initial calculations reveal a tensile stress of 57.7 MPa in the Si/SiO2 beams. The residual tensile stress subsequently caused the overall beam stiffness to be two orders of magnitude higher than it would be without stress. After stripping the oxide with a buffered oxide etchant (BOE), a residual stress of 26.5 MPa was measured, which is presumably caused from the remaining boron concentration. The aim of this paper is to understand influences of boron doping and processing variables on residual stresses.

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