Crosshatch patterns in GaAs films on Si substrates due to thermal strain in annealing processes

1987 ◽  
Vol 51 (23) ◽  
pp. 1928-1930 ◽  
Author(s):  
Takashi Nishioka ◽  
Yoshio Itoh ◽  
Akio Yamamoto ◽  
Masafumi Yamaguchi
Keyword(s):  
Thermal Strain ◽  
Si Substrates ◽  
Gaas Films

Observation of GaAs/Si Epitaxial Interfaces by Atomic Resolution Electron Microscopy

1986 ◽  
Vol 67 ◽  
Author(s):  
N. Otsuka ◽  
C. Choi ◽  
Y. Nakamura ◽  
S. Nagakura ◽  
R. Fischer ◽  
...  
Keyword(s):  
Substrate Surface ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Si Substrates ◽  
Voltage Electron ◽  
Resolution Electron ◽  
Gaas Films ◽  
Substrate Surfaces

ABSTRACTRecent studies have shown that high quality GaAs films can be grown by MBE on Si substrates whose surfaces are slightly tilted from the (100) plane. In order to investigate the effect of the tilting of substrate surfaces on the formation of threading dislocations, the GaAs/Si epitaxial interfaces have been observed with a 1 MB ultra-high vacuum, high voltage electron microscope. Two types of misfit dislocations, one with Burgers vectors parallel to the interface and the other with Burgers vectors inclined from the interface, were found in these epitaxial interfaces. The observation of crosssectional samples perpendicular to each other has shown that the tilting of the substrate surface directly influences the generation of these two types of misfit dislocations. The mechanism of the reduction of threading dislocations by the tilting of the substrate surface is discussed based on these observations.

The Photoluminescence and TEM Studies of Patterned GaAs films on Si Substrate Grown by Molecular Beam Epitaxy

1988 ◽  
Vol 116 ◽  
Author(s):  
Henry P. Lee ◽  
Yi-He Huang ◽  
Xiaoming Liu ◽  
Hong Lin ◽  
John. S. Smith ◽  
...  
Keyword(s):  
Tensile Stress ◽  
Uniaxial Stress ◽  
Luminescence Spectra ◽  
Residual Tensile Stress ◽  
Photoluminescence Intensity ◽  
Patterned Substrate ◽  
Si Substrates ◽  
Gaas Films ◽  
Patterned Films ◽  
Window Area

AbstractPatterned epitaxial GaAs films have been formed on Si substrates by either growth over patterned substrate (selective -area epitaxy) or chemical etching of patterns after growth. The optical properties of these samples are studied by 77K photoluminescence (PL) and the defect structures are investigated by transmission electron microscope (TEM). The patterned substrate consisted of bare Si stripes with width ranging from 10 µm to 100 µm surrounded by Si3N4 films on both sides and a reference area of bare Si. For 1.5 µmiann d 3 µm thick films, PL intensities from the films inside the 10 µm stripe shows 140% and 75% increase over unpatterned areas while the residual tensile stress in the patterned films is very similar to that of the unpatterned area. The increase in the photoluminescence intensity is ascribed to the reduction of crystalline defects inside the the window area. In the chemically etched sample, the pattern consisted of 4 µm by 4 µm squares and 1 mm long stripes with widths ranging from 100 µm to 4 plm. From the shift of PL peaks, a monotonic decrease in the tensile stress versus stripe width is observed. In particular, when the width of the stripe is less than 7 µm. tensile stress becomes essentially uniaxial in agreement with the results obtained by Yacobi et al [16] on a GaAs on InP sample. The polarization of the luminescence spectra parallel and perpendicular to the uniaxial stress of a 4 µm wide stripe agrees well with theoretical prediction. It is also observed that tensile stress is almost completely relieved in the 4 µm by 4 muentc hed squares.

Implantation Energy Selection in Molecular Beam Epitaxy GaAs Films on Si Substrates

1991 ◽  
Vol 8 (3) ◽  
pp. 149-152
Author(s):  
Xiao Guangming ◽  
Yin Shiduan ◽  
Zhang Jingping ◽  
Ding Aiju ◽  
Dong Aihua ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Implantation Energy ◽  
Si Substrates ◽  
Gaas Films

Molecular Beam Epitaxial Growth and Characterization of GaAs Films on Thin Si Substrates

1998 ◽  
Vol 37 (Part 1, No. 1) ◽  
pp. 39-44 ◽  
Author(s):  
Kenzo Maehashi ◽  
Hisao Nakashima ◽  
Frank Bertram ◽  
Peter Veit ◽  
Jürgen Christen
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Si Substrates ◽  
Molecular Beam Epitaxial ◽  
Gaas Films ◽  
Molecular Beam Epitaxial Growth

scholarly journals Impact of LT-GaAs layers on crystalline properties of the epitaxial GaAs films grown by MBE on Si substrates

2016 ◽  
Vol 741 ◽  
pp. 012020 ◽  
Author(s):  
M O Petrushkov ◽  
M A Putyato ◽  
A K Gutakovsky ◽  
V V Preobrazhenskii ◽  
I D Loshkarev ◽  
...  
Keyword(s):  
Epitaxial Gaas ◽  
Si Substrates ◽  
Gaas Films ◽  
Lt Gaas

Etching Technique to Reveal Dislocations in Thin GaAs Films Grown on Si Substrates

1988 ◽  
Vol 27 (Part 2, No. 2) ◽  
pp. L159-L160 ◽  
Author(s):  
Hironobu Nishikawa ◽  
Tetsuo Soga ◽  
Nobuo Mikuriya ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
Etching Technique ◽  
Si Substrates ◽  
Gaas Films

ArF Excimer Laser-Induced Epitaxial Growth of GaAs Films on Si

1988 ◽  
Vol 116 ◽  
Author(s):  
Shirley S. Chu ◽  
T. L. Cpu ◽  
C. L. Chang
Keyword(s):  
Gallium Arsenide ◽  
Substrate Temperature ◽  
Excimer Laser ◽  
Substrate Surface ◽  
Molar Ratio ◽  
Structural Perfection ◽  
Lower Growth ◽  
Si Substrates ◽  
Gaas Films ◽  
Arf Excimer Laser

AbstractEpitaxial gallium arsenide films have been deposited on single crystalline GaAs substrates of {100} orientation and Si substrates of 3° off the {100} orientation by ArF excimer laser-induced metalorganic chemical vapor deposition. The important process parameters include the cleanliness of the substrate surface, substrate temperature, the composition, flow rate, and pressure of the reaction mixture, and the pulse energy and pulse rate of the laser. Particular attention was directed to the in-situ cleaning of the substrate surface prior to the deposition process. Homoepitaxial gallium arsenide films of good structural perfection have been deposited at 425°- 500 ° C and their single crystallinity has been confirmed by transmission electron microscopy. The carrier concentration decreases with increasing AsH3/(CH3)3 Ga molar ratio and with decreasing substrate temperature. Lower growth rate during the initial stage of deposition is necessary to obtain heteroepitaxial gallium arsenide films on Si with good structural perfection. The TEM examination of GaAs films of 0.15–0.2 µm thickness deposited on Si substrates at 500 °C has shown that stacking faults were present in the GaAs films; however, there is no apparent threading dislocations in the surface region of the thin GaAs film.

Study of thermal strain relaxation in GaAs grown on Ge/Si substrates

2006 ◽  
Vol 121 (2) ◽  
pp. 375-378 ◽  
Author(s):  
D. Colombo ◽  
E. Grilli ◽  
M. Guzzi ◽  
S. Sanguinetti ◽  
A. Fedorov ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Thermal Strain ◽  
Si Substrates

GaAs Films Heteroepitaxially Grown on Si Substrates by Mixture Beams of Ions and Molecules

1992 ◽  
Vol 31 (Part 1, No. 9A) ◽  
pp. 2959-2963 ◽  
Author(s):  
Susumu Tamura ◽  
Naohiro Tuzi ◽  
Masahiko Hyouzou ◽  
Katsuhiro Yokota ◽  
Saichi Katayama
Keyword(s):  
Si Substrates ◽  
Gaas Films

scholarly journals GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Andrea Ballabio ◽  
Sergio Bietti ◽  
Andrea Scaccabarozzi ◽  
Luca Esposito ◽  
Stefano Vichi ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Thermal Strain ◽  
Gaas Layer ◽  
Optical Quality ◽  
Silicon Substrates ◽  
Phase Boundaries ◽  
High Optical Quality ◽  
Quantum Well Structures ◽  
Si Substrates

AbstractWe demonstrate the growth of low density anti-phase boundaries, crack-free GaAs epilayers, by Molecular Beam Epitaxy on silicon (001) substrates. The method relies on the deposition of thick GaAs on a suspended Ge buffer realized on top of deeply patterned Si substrates by means of a three-temperature procedure for the growth. This approach allows to suppress, at the same time, both threading dislocations and thermal strain in the epilayer and to remove anti-phase boundaries even in absence of substrate tilt. Photoluminescence measurements show the good uniformity and the high optical quality of AlGaAs/GaAs quantum well structures realized on top of such GaAs layer.

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