Molecular-beam epitaxy growth of high-performance midinfrared diode lasers

1994 ◽  
Vol 12 (2) ◽  
pp. 1266 ◽  
Author(s):  
G. W. Turner
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Performance ◽  
Molecular Beam ◽  
Diode Lasers ◽  
Molecular Beam Epitaxy Growth

Molecular beam epitaxy growth and characterization of mid-IR type-II “W” diode lasers

2005 ◽  
Vol 23 (3) ◽  
pp. 1119 ◽  
Author(s):  
C. L. Canedy ◽  
W. W. Bewley ◽  
G. I. Boishin ◽  
C. S. Kim ◽  
I. Vurgaftman ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Diode Lasers ◽  
Molecular Beam Epitaxy Growth ◽  
Type Ii

Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers

2011 ◽  
Vol 32 (10) ◽  
pp. 103002 ◽  
Author(s):  
Yu Zhang ◽  
Guowei Wang ◽  
Bao Tang ◽  
Yingqiang Xu ◽  
Yun Xu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Diode Lasers ◽  
Molecular Beam Epitaxy Growth ◽  
Strained Quantum Well

Molecular Beam Epitaxy Growth of High Mobility Compound Semiconductor Devices for Integration with Si CMOS

2009 ◽  
Vol 1194 ◽  
Author(s):  
Dmitri Lubyshev ◽  
Joel M. Fastenau ◽  
Ying Wu ◽  
Andrew Synder ◽  
Amy W. K. Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Speed ◽  
High Performance ◽  
Molecular Beam ◽  
High Mobility ◽  
Molecular Beam Epitaxy Growth ◽  
Wafer Level ◽  
Low Power Dissipation ◽  
Device Placement ◽  
Rf Performance

AbstractWe report on a direct epitaxial growth approach for the heterogeneous integration of high speed III-V devices with Si CMOS logic on a common Si substrate. InP-based heterojunction bipolar transistor (HBTs) structures were successfully grown on patterned Si-on-Lattice-Engineered-Substrate (SOLES) substrates using molecular beam epitaxy. DC and RF performance similar to those grown on lattice-matched InP were achieved in growth windows as small as 15×15μm2. This truly planar approach allows tight device placement with InP-HBTs to Si CMOS transistors separation as small as 2.5 μm, and the use of standard wafer level multilayer interconnects. A high speed, low power dissipation differential amplifier was designed and fabricated, demonstrating the feasibility of using this approach for high performance mixed signal circuits such as ADCs and DACs.

Molecular beam epitaxy growth of HgCdTe for high performance infrared photon detectors

2007 ◽  
Vol 50 (2-3) ◽  
pp. 284-290 ◽  
Author(s):  
Yong Chang ◽  
C. Fulk ◽  
J. Zhao ◽  
C.H. Grein ◽  
S. Sivananthan
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Performance ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Photon Detectors ◽  
Infrared Photon

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well
Sign in / Sign up

Export Citation Format

Share Document