Strain and misorientation in GaAs grown on Si(001) by organometallic epitaxy

1988 ◽  
Vol 53 (13) ◽  
pp. 1204-1206 ◽  
Author(s):  
S. K. Ghandhi ◽  
J. E. Ayers
Keyword(s):  
Organometallic Epitaxy

Organometallic epitaxy of HgCdTe on CdTeSe substrates with high compositional uniformity

1988 ◽  
Vol 52 (5) ◽  
pp. 392-394 ◽  
Author(s):  
Sorab K. Ghandhi ◽  
Ishwara B. Bhat ◽  
Hamid Fardi
Keyword(s):  
Compositional Uniformity ◽  
Organometallic Epitaxy

Effect of process conditions on the quality of CdTe grown on InSb by organometallic epitaxy

1986 ◽  
Vol 49 (19) ◽  
pp. 1290-1292 ◽  
Author(s):  
S. K. Ghandhi ◽  
N. R. Taskar ◽  
I. B. Bhat
Keyword(s):  
Process Conditions ◽  
Organometallic Epitaxy

The mercury pressure dependence of arsenic doping in HgCdTe, grown by organometallic epitaxy (direct alloy growth process)

1991 ◽  
Vol 110 (4) ◽  
pp. 692-696 ◽  
Author(s):  
N.R. Taskar ◽  
I.B. Bhat ◽  
K.K. Parat ◽  
S.K. Ghandhi ◽  
G.J. Scilla
Keyword(s):  
Pressure Dependence ◽  
Growth Process ◽  
Arsenic Doping ◽  
Direct Alloy ◽  
Organometallic Epitaxy

Low-temperature organometallic epitaxy and its application to superlattice structures in thermoelectrics

1999 ◽  
Vol 75 (8) ◽  
pp. 1104-1106 ◽  
Author(s):  
Rama Venkatasubramanian ◽  
Thomas Colpitts ◽  
Brooks O’Quinn ◽  
Sandra Liu ◽  
Nadia El-Masry ◽  
...  
Keyword(s):  
Low Temperature ◽  
Superlattice Structures ◽  
Organometallic Epitaxy

GROWTH AND CHARACTERIZATION OF Hg1−xCdxTe ON CdTe SUBSTRATES, PREPARED BY ORGANOMETALLIC EPITAXY

1985 ◽  
Vol 56 ◽  
Author(s):  
I. B. Bhat ◽  
S. K. Ghandhi
Keyword(s):  
Temperature Range ◽  
Horizontal Reactor ◽  
P Type ◽  
Specular Surfaces ◽  
Organometallic Epitaxy

AbstractHgl−xCdxTe layers have been grown on CdTe substrates using dimethylcadmium, diethyltelluride and mercury in a horizontal reactor. Details of conditions for growth of these layers are presented in this paper. Specular surfaces of Hg1−x CdxTe with × ≥ 0.15 were obtained on (100) 3°, → (110) oriented CdTe substrates. Both n-type and p-type layers could be obtained. The mobility of these layers was measured over the temperature range of 10 K to 300 K. The mobility of n-type Hg.81 Cd.19Te layers, measured at 2.1 kG, was 3.0 × 105 cm2/V-sec at 60 K, falling to 2 × 105 cm2/V-sec at 10 K. P-type layers were also grown, and are described in this paper.

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