IN SITU X-RAY SCATTERING STUDIES OF CHEMICAL VAPOR DEPOSITION

1989 ◽  
Vol 50 (C7) ◽  
pp. C7-159-C7-168
Author(s):  
P. H. FUOSS ◽  
D. W. KISKER ◽  
S. BRENNAN ◽  
J. L. KAHN ◽  
G. RENAUD ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

In situ x-ray scattering study of PbTiO3 chemical-vapor deposition

2002 ◽  
Vol 80 (10) ◽  
pp. 1809-1811 ◽  
Author(s):  
M. V. Ramana Murty ◽  
S. K. Streiffer ◽  
G. B. Stephenson ◽  
J. A. Eastman ◽  
G.-R. Bai ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray ◽  
X Ray Scattering ◽  
Scattering Study ◽  
Ray Scattering

scholarly journals Single-crystal CVD diamonds as small-angle X-ray scattering windows for high-pressure research

2012 ◽  
Vol 45 (3) ◽  
pp. 453-457 ◽  
Author(s):  
Suntao Wang ◽  
Yu-fei Meng ◽  
Nozomi Ando ◽  
Mark Tate ◽  
Szczesny Krasnicki ◽  
...  
Keyword(s):  
High Pressure ◽  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Small Angle ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Optical Quality ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

Small-angle X-ray scattering (SAXS) was performed on single-crystal chemical vapor deposition (CVD) diamonds with low nitrogen concentrations, which were fabricated by microwave plasma-assisted chemical vapor deposition at high growth rates. High optical quality undoped 500 µm-thick single-crystal CVD diamonds grown without intentional nitrogen addition proved to be excellent as windows on SAXS cells, yielding parasitic scattering no more intense than a 7.5 µm-thick Kapton film. A single-crystal CVD diamond window was successfully used in a high-pressure SAXS cell.

Real-Time X-Ray Scattering Studies of Surface Structure During Metalorganic Chemical Vapor Deposition of GaN

MRS Bulletin ◽  
1999 ◽  
Vol 24 (1) ◽  
pp. 21-25 ◽  
Author(s):  
G. Brian Stephenson ◽  
Jeffrey A. Eastman ◽  
Orlando Auciello ◽  
Anneli Munkholm ◽  
Carol Thompson ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Structure ◽  
Real Time ◽  
Vapor Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Rays ◽  
Production Scale ◽  
X Ray

Vapor-phase processes such as chemical vapor deposition (CVD) and reactive ion etching are the primary methods for the production-scale synthesis and processing of many high-quality thin-film materials. For example, these processes are widely used in the microelectronics industry for synthesis and lithography of the various semiconducting, insulating, and conducting layers in devices. Understanding the means of controlling the microstructure and composition of these materials is of great technological interest. However a difficulty often encountered in developing vapor-phase processes is an undesirable dependence on trial-and-error methods for optimizing the many process parameters. These parameters include gas composition, flow rate, pressure, and substrate temperature, all of which are typically changing with time. This reliance on empirical methods can be attributed to the tremendous chemical and physical complexity of vapor-phase processes and the lack of appropriate in situ measurement techniques for the vapor-phase environment.We have initiated a program to apply synchrotron x-ray analysis techniques as real-time probes of film and surface structure during vapor-phase processing. X-rays have a combination of properties which makes them particularly well-suited for these studies. Unlike electrons, x-rays have a sufficiently low absorption to penetrate vapor-phase processing environments and chamber walls. Unlike visible light, x-rays have wavelengths and energies suitable for study of atomic-scale structure and chemistry. A growing number of in situ synchrotron x-ray investigations of film growth and processing demonstrate the power of these techniques.

In situ X-ray studies of metal organic chemical vapor deposition of PbZrxTi1−xO3

2007 ◽  
Vol 515 (14) ◽  
pp. 5593-5596 ◽  
Author(s):  
R.-V. Wang ◽  
F. Jiang ◽  
D.D. Fong ◽  
G.B. Stephenson ◽  
P.H. Fuoss ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Application of X-Ray Scattering to the in Situ Study of Organometallic Vapor Phase Epitaxy

1988 ◽  
Vol 131 ◽  
Author(s):  
P. H. Fuoss ◽  
D. W. Kisker ◽  
S. Brennan ◽  
J. L. Kahn
Keyword(s):  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
High Signal ◽  
X Ray ◽  
Surface Sensitivity ◽  
X Ray Scattering ◽  
Detailed Surface ◽  
Ray Scattering

ABSTRACTDespite their importance, the detailed surface reactions and rearrangements which occur during chemical vapor deposition remain largely undetermined because of the lack of suitable experimental probes. In principle, x-ray scattering and spectroscopy techniques are well suited to studying these near atmospheric pressure processes but advances in this area have been limited both by the lack of suitable x-ray sources and by the difficulty of integrating the growth and measurement experiments. We have developed equipment and techniques to perform in situ x-ray scattering studies of the structure of surfaces during organometallic vapor phase epitaxial (OMVPE) growth using the extremely bright undulator radiation from the PEP electron storage ring. In this paper, we describe our initial experimental results studying cleaning and subsequent reconstruction of GaAs (001) surfaces in a flowing H2 ambient. These results demonstrate the excellent surface sensitivity, low background and high signal levels necessary to study the dynamic processes associated with semiconductor growth using OMVPE.

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