Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44–360nm: Photoemission assessments

2008 ◽  
Vol 92 (2) ◽  
pp. 022108 ◽  
Author(s):  
A. BenMoussa ◽  
J. F. Hochedez ◽  
R. Dahal ◽  
J. Li ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
Spectral Range ◽  
Metal Semiconductor Metal

CHARACTERIZATION OF AN AlGaAs/GaAs METAL-SEMICONDUCTOR-METAL PHOTODETECTOR

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-325-C4-328
Author(s):  
M. ZIRNGIBL ◽  
R. SACHOT ◽  
M. ILEGEMS
Keyword(s):  
Metal Semiconductor Metal

scholarly journals Theory, simulation, fabrication, and characterization of Galois scattering plates for the optical and the THz spectral range

AIP Advances ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 065130
Author(s):  
Henning Fouckhardt ◽  
Christoph Doering ◽  
Michael Jaax ◽  
Bert Laegel
Keyword(s):  
Spectral Range ◽  
Fabrication And Characterization

scholarly journals Characterization of Gaas/Si/GaAs Heterointerfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
Raymond P. Mariella
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Defect Density ◽  
Si Substrate ◽  
Reverse Polarity ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Semiconductor Metal

ABSTRACTTransmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper. Two kinds of samples are compared: GaAs grown on a 15 Å Si epilayer grown on GaAs, and GaAs grown at low temperature (300°C) on Si substrates. It is shown that the GaAs epitaxial layer grown on thin Si layer has reverse polarity to the substrate (antiphase relation). Higher defect density is observed for GaAs grown on Si substrate. This higher defect density correlates with an increased device speed, but with reduced sensitivity.

Characterization of Dynamic Behaviour of Metal-Semiconductor-Metal Photodetectors by Correlation Technique

1994 ◽  
Vol 33 (Part 1, No. 1B) ◽  
pp. 844-847 ◽  
Author(s):  
Markus Sickmöller ◽  
Peter Urbach ◽  
Wolfgang Kowalsky
Keyword(s):  
Dynamic Behaviour ◽  
Correlation Technique ◽  
Metal Semiconductor Metal

scholarly journals Characterization of asteroid analogues by means of emission and reflectance spectroscopy in the 1- to 100-µm spectral range

2016 ◽  
Vol 68 (1) ◽  
Author(s):  
Alessandro Maturilli ◽  
Jörn Helbert ◽  
Sabrina Ferrari ◽  
Björn Davidsson ◽  
Mario D’Amore
Keyword(s):  
Spectral Range ◽  
Reflectance Spectroscopy

scholarly journals Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor

PLoS ONE ◽  
2016 ◽  
Vol 11 (1) ◽  
pp. e0145423 ◽  
Author(s):  
Hassan Maktuff Jaber Al-Ta’ii ◽  
Vengadesh Periasamy ◽  
Yusoff Mohd Amin
Keyword(s):  
Radiation Sensor ◽  
Metal Semiconductor Metal
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