MINORITY CARRIER LIFETIME MEASUREMENTS IN SEMICONDUCTOR DEVICES MONITORED BY A MICROPROCESSOR IN E.B.I.C, MODE

1984 ◽  
Vol 45 (C2) ◽  
pp. C2-865-C2-868 ◽  
Author(s):  
J. F. Bresse ◽  
D. Rivière
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Semiconductor Devices ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurements

Control of Minority Carrier Lifetime by Gold Implantation in Semiconductor Devices

1989 ◽  
Vol 136 (7) ◽  
pp. 2073-2075 ◽  
Author(s):  
S. Coffa ◽  
L. Calcagno ◽  
S. U. Campisano ◽  
G. Calleri ◽  
G. Ferla
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Semiconductor Devices ◽  
Minority Carrier Lifetime

ChemInform Abstract: Control of Minority Carrier Lifetime by Gold Implantation in Semiconductor Devices.

ChemInform ◽  
1989 ◽  
Vol 20 (46) ◽  
Author(s):  
S. COFFA ◽  
L. CALCAGNO ◽  
S. U. CAMPISANO ◽  
G. CALLERI ◽  
G. FERLA
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Semiconductor Devices ◽  
Minority Carrier Lifetime

Minority Carrier Lifetime Measurements by Photoinduced Carrier Microwave Absorption Method

2011 ◽  
Vol 50 (3S) ◽  
pp. 03CA02 ◽  
Author(s):  
Toshiyuki Sameshima ◽  
Tomokazu Nagao ◽  
Shinya Yoshidomi ◽  
Kazuya Kogure ◽  
Masahiko Hasumi
Keyword(s):  
Microwave Absorption ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Absorption Method ◽  
Lifetime Measurements

Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay

2009 ◽  
Vol 615-617 ◽  
pp. 295-298 ◽  
Author(s):  
Laurent Ottaviani ◽  
Olivier Palais ◽  
Damien Barakel ◽  
Marcel Pasquinelli
Keyword(s):  
Absorption Spectra ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Optical Excitation ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurements ◽  
Recombination Processes ◽  
Photoconductivity Decay ◽  
P Type ◽  
Non Destructive

We report on measurements of the minority carrier lifetime for different epitaxial 4H-SiC layers by using the microwave photoconductivity decay (µ-PCD) method. This is a non-contacting, non-destructive method very useful for the monitoring of recombination processes in semiconductor material. Distinct samples have been analyzed, giving different lifetime values. Transmittance and absorption spectra have also been carried out. The n-type layers, giving rise to a specific absorption peak near 470 nm, are not sensitive to optical excitation for the used wavelengths, as opposite to p-type layers whose lifetime values depend on thickness and doping.

Sign in / Sign up

Export Citation Format

Share Document