scholarly journals TRANSIENTS IN CW LASER HEATING OF SEMICONDUCTORS : GENERAL METHOD, ANALYTICAL SOLUTIONS AND ILLUSTRATIONS

1983 ◽  
Vol 44 (C5) ◽  
pp. C5-87-C5-90
Author(s):  
A. Maruani ◽  
Y. I. Nissim ◽  
F. Bonnouvrier ◽  
D. Paquet
1983 ◽  
Vol 13 ◽  
Author(s):  
Alain Maruani ◽  
Y.I. Nissim ◽  
F. Bonnouvrier ◽  
D. Paquet

ABSTRACTIt is shown how the systematic use of the method of integral transforms greatly simplifies the calculation of the temperature rises in laser irradiated media. In general, this method leads ultimately either to analytical results or to very simple numerical integrals (e.g. no poles, exponential kernels). We focus here on the analytical results, and discuss some aspects of CW laser heating, for large surface absorption, including radial dependance, depth dependance and transient nonlinearities. The new results derived in this treatment are in good agreement with experimental data from other studies.


AIP Advances ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 025201 ◽  
Author(s):  
Jiawei Wang ◽  
Bin Li ◽  
Yongxiang Zhu ◽  
Weiping Liu ◽  
Lixiong Wu ◽  
...  

1982 ◽  
Vol 17 ◽  
Author(s):  
Dimitry Kirillov ◽  
James L. Merz

ABSTRACTThe frequency of the phonon line in the Raman scattering spectrum recorded during CW laser-beam heating of Si was used as a characteristic of the lattice temperature inside the laser spot. It is shown that Raman scattering is a good temperature probe up to the laser power approaching optical damage of Si.


1984 ◽  
Vol 35 ◽  
Author(s):  
G.L. Olson ◽  
J.A. Roth ◽  
Y. Rytz-Froidevaux ◽  
J. Narayan

ABSTRACTThe temperature dependent competition between solid phase epitaxy and random crystallization in ion-implanted (As+, B+, F+, and BF2+) silicon films is investigated. Measurements of time-resolved reflectivity during cw laser heating show that in the As+, F+, and BF2+-implanted layers (conc 4×1020cm-3) epitaxial growth is disrupted at temperatures 1000°C. This effect is not observed in intrinsic films or in the B+-implanted layers. Correlation with results of microstructural analyses and computer simulation of the reflectivity experiment indicates that disruption of epitaxy is caused by enhancement of the random crystallization rate by arsenic and fluorine. Kinetics parameters for the enhanced crystallization process are determined; results are interpreted in terms of impurity-catalyzed nucleation during the random crystallization process.


1980 ◽  
Vol 1 ◽  
Author(s):  
S A. Kokorowski ◽  
G. L. Olson ◽  
L. D. Hess

ABSTRACTWe present a thermal analysis which treats the problem of melting as it occurs during cw laser heating. Analytical expressions for sample temperature distributions are derived, and calculated results are compared to experimental measurements.


AIP Advances ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 015010
Author(s):  
Jiawei Wang ◽  
Chongyu Lin ◽  
Guobin Feng ◽  
Bin Li ◽  
Lixiong Wu ◽  
...  

1974 ◽  
Vol 45 (11) ◽  
pp. 4964-4968 ◽  
Author(s):  
T. G. Pavlopoulos ◽  
K. Crabtree

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