Deposition of Polysilicon Films by Hot-Wire CVD at Low Temperatures for Photovoltaic Applications

1995 ◽  
Vol 377 ◽  
Author(s):  
J. Puigdollers ◽  
J. Bertomeu ◽  
J. Cifre ◽  
J. Andreu ◽  
J. C. Delgado
Keyword(s):  
Gas Phase ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Amorphous Phases ◽  
Photovoltaic Applications ◽  
Polysilicon Films ◽  
Hydrogen Mixtures ◽  
Si Films ◽  
Substrate Temperatures ◽  
Very High

ABSTRACTPolysilicon (poly-Si) thin films have been obtained using hot-wire chemical vapor deposition (HWCVD) from silane-hydrogen mixtures. The films were prepared at low substrate temperatures (down to 200°C) and at very high deposition rates (up to 40 Å/s). They showed good crystalline properties and no amorphous phases were detected. The films can also be efficiently doped by adding diborane or phosphine to gas phase. In this paper, an overview of the properties of the poly-Si films, intrinsic and p and n-doped, deposited at our laboratory by HWCVD is presented and discussed. The properties of the material and the features of the deposition technique which are interesting for their application in photovoltaics are emphasized.

Hot-wire chemical vapor deposition and characterization of p-type nanocrystalline Si films for thin film photovoltaic applications

2012 ◽  
Vol 520 (16) ◽  
pp. 5200-5205 ◽  
Author(s):  
Hsin-Yuan Mao ◽  
Shih-Yung Lo ◽  
Dong-Sing Wuu ◽  
Bing-Rui Wu ◽  
Sin-Liang Ou ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Photovoltaic Applications ◽  
Si Films ◽  
P Type ◽  
Nanocrystalline Si

Properties of Nanocrystalline 3C-SiC:H and SiC:Ge:H Films Deposited at Low Substrate Temperatures

2006 ◽  
Vol 910 ◽  
Author(s):  
Shinsuke Miyajima ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Germanium Alloy ◽  
Temperature Deposition ◽  
P Type ◽  
Cubic Silicon Carbide ◽  
Charged Defects ◽  
Substrate Temperatures

AbstractWe have investigated properties of nanocrystalline hydrogenated cubic silicon carbide (nc-3C-SiC:H) and silicon carbide: germanium alloy (nc-SiC:Ge:H) films deposited by hot-wire chemical vapor deposition (HWCVD) at low temperatures of about 300°C. we found that the density of charged defects was strongly influenced by grain size of the films. In-situ doping into nc-3C-SiC:H films was also carried out. N-type nc-3C-SiC:H films were successfully deposited by using phosphine (PH3) and hexamethyldisilazane (HMDS) as dopants. We found that HMDS is an effective n-type dopant for low temperature deposition of nc-3C-SiC:H films by HWCVD. For the deposition of p-type nc-3C-SiC:H with trimethylaluminum (TMA), it was found that the substrate temperature of above 300°C is required to activate the acceptors. We added dimethylgermane (DMG) into mixture of MMS and H2 to prepare nc-SiC:Ge:H films. The nc-SiC:Ge:H films with Ge mole fraction of 1.9% were successfully deposited.

Gas phase and surface kinetic processes in polycrystalline silicon hot-wire chemical vapor deposition

2001 ◽  
Vol 395 (1-2) ◽  
pp. 29-35 ◽  
Author(s):  
J.K Holt ◽  
M Swiatek ◽  
D.G Goodwin ◽  
R.P Muller ◽  
W.A Goddard ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Kinetic Processes

High Mobility a-Si:H TFT Fabricated by Hot Wire Chemical Vapor Deposition

2010 ◽  
Vol 1245 ◽  
Author(s):  
Chun-Yuan Hsueh ◽  
Chieh-Hung Yang ◽  
Si-Chen Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
High Mobility ◽  
Chemical Vapor ◽  
Field Effect Mobility ◽  
Hot Wire ◽  
Low Threshold ◽  
Hydrogenated Amorphous ◽  
Very High

AbstractThe hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) having a very high field-effect mobility of 1.76 cm2/V-s and a low threshold voltage of 2.43 V have been fabricated successfully using the hot wire chemical vapor deposition (HWCVD).

Fabrication and Characterization of Cold Electron Emitter Based on Nanocrystalline Silicon Dots

2000 ◽  
Vol 638 ◽  
Author(s):  
K. Nishiguchi ◽  
X. Zhao ◽  
S. Oda
Keyword(s):  
Gas Phase ◽  
High Frequency ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Cold Electron ◽  
Very High Frequency ◽  
Electron Emitter ◽  
Fabrication And Characterization ◽  
Very High

AbstractA cold electron emitter has been made from nanocrystalline silicon (nc-Si) dots. Nc-Si dots are formed in the gas phase by very-high-frequency (VHF) plasma enhanced chemical vapor deposition (CVD). Electrons, accelerated by electric field, are ballistically transported through nc-Si and SiO2, then extracted into vacuum. Electron emission efficiency is optimized through varying nc-Si film thickness, surface roughness, and by short thermal oxidation.

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