MÖSSBAUER STUDY OF RESISTIBILITY TO OXIDATION OF THIN FILMS Sn1-xPbxTe AND Sn1-xPbxSe

1980 ◽  
Vol 41 (C1) ◽  
pp. C1-327-C1-328
Author(s):  
A. Amulevičius ◽  
D. Baltrùnas ◽  
I. Brodin ◽  
D. Freik ◽  
K. Makariùnas ◽  
...  
Keyword(s):  
Thin Films ◽  
Mössbauer Study ◽  
Oxidation Of Thin Films

3.21 Oxidation of thin films of cerium

Vacuum ◽  
1967 ◽  
Vol 17 (6) ◽  
pp. 336
Author(s):  
I G Murgulescu ◽  
G Costeanu
Keyword(s):  
Thin Films ◽  
Oxidation Of Thin Films

Conversion electron Mössbauer study of amorphous FeSi thin films

1978 ◽  
Vol 26 (12) ◽  
pp. 883-887 ◽  
Author(s):  
R.S. Oswald ◽  
M. Ron ◽  
M. Ohring
Keyword(s):  
Thin Films ◽  
Conversion Electron ◽  
Mössbauer Study

Effect of sulfur dioxide on the oxidation of thin films of tin

1983 ◽  
Vol 19 (5-6) ◽  
pp. 187-199 ◽  
Author(s):  
C. I. Muneera ◽  
S. Varghese ◽  
V. Unnikrishnan Nayar
Keyword(s):  
Thin Films ◽  
Sulfur Dioxide ◽  
Oxidation Of Thin Films

Mössbauer study of Cu-Fe composition-modulated thin films

1985 ◽  
Vol 51 (1-3) ◽  
pp. 273-279 ◽  
Author(s):  
H.M. van Noort ◽  
F.J.A. den Broeder ◽  
H.J.G. Draaisma
Keyword(s):  
Thin Films ◽  
Mössbauer Study

Features of laser oxidation of thin films of titanium

2014 ◽  
Vol 81 (5) ◽  
pp. 298 ◽  
Author(s):  
E. A. Shakhno ◽  
D. A. Sinev ◽  
A. M. Kulazhkin
Keyword(s):  
Thin Films ◽  
Oxidation Of Thin Films

Mössbauer study of electrochemically deposited amorphous iron-sulfide-oxide thin films

2016 ◽  
Vol 55 (3) ◽  
pp. 038006 ◽  
Author(s):  
Masaya Ichimura ◽  
Takahiro Kajima ◽  
Shoichi Kawai ◽  
Ko Mibu
Keyword(s):  
Thin Films ◽  
Iron Sulfide ◽  
Oxide Thin Films ◽  
Mössbauer Study ◽  
Amorphous Iron ◽  
Electrochemically Deposited

Interface morphologies in the polysilicon-SiO2 materials system

1983 ◽  
Vol 41 ◽  
pp. 108-109
Author(s):  
John C. Bravman
Keyword(s):  
Thin Films ◽  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Structural Integrity ◽  
Thermally Grown Oxide ◽  
Fine Scale ◽  
Lattice Imaging ◽  
Materials Research ◽  
Device Operation ◽  
Oxidation Of Thin Films

The fabrication of increasingly complex integrated circuit devices represents one of the most challenging areas of applied materials research. As layout geometries are reduced, device operation becomes more readily influenced both by the presence of various materials defects and by the structural integrity of the interfaces involved. Critical to the manufacture of such devices are the technologies associated with the deposition, doping, and oxidation of thin films of polycrystalline silicon (polysilicon). The strong interrelationship between the last two of these processes can result in the formation of unusual morphologies at the interface between the polysilicon and its thermally grown oxide. Conventional TEM has been applied to establish the nature of several such structures. Because their spatial extent is sometimes extremely small (e.g. 20A), high resolution lattice imaging was utilized in order to gain crystallographic information of a very fine scale.

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