Reflection adsorption infrared spectroscopy of the oxidation of thin films of boron and hafnium diboride grown on Hf(0001)

1997 ◽  
Vol 15 (6) ◽  
pp. 3065-3068 ◽  
Author(s):  
Michael Belyansky ◽  
Michael Trenary
Keyword(s):  
Thin Films ◽  
Infrared Spectroscopy ◽  
Hafnium Diboride ◽  
Oxidation Of Thin Films

Explosive Thermal Decomposition Mechanism of NTO

1995 ◽  
Vol 418 ◽  
Author(s):  
David J. Beardall ◽  
Tod R. Botcher ◽  
Charles A. Wight
Keyword(s):  
Thin Films ◽  
Thermal Decomposition ◽  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Condensed Phase ◽  
Decomposition Product ◽  
Rapid Heating ◽  
Initial Step ◽  
Thermal Decomposition Mechanism ◽  
Decomposition Products

AbstractThe initial step of the thermal decomposition of NTO (5-nitro-2,4-dihydro-3H-1,2,4- triazol-3-one) is determined by pulsed infrared laser pyrolysis of thin films. Rapid heating of the film and quenching to 77 K allows one to trap the initial decomposition products in the condensed phase and analyze them using transmission Fourier-transform infrared spectroscopy. The initial decomposition product is CO2; NO2 and HONO are not observed. We propose a new mechanism for NTO decomposition in which CO2 is formed.

Enhanced crystallization kinetics in poly(ethylene terephthalate) thin films evidenced by infrared spectroscopy

Polymer ◽  
2010 ◽  
Vol 51 (16) ◽  
pp. 3660-3668 ◽  
Author(s):  
Monica Bertoldo ◽  
Massimiliano Labardi ◽  
Cinzia Rotella ◽  
Simone Capaccioli
Keyword(s):  
Thin Films ◽  
Infrared Spectroscopy ◽  
Crystallization Kinetics ◽  
Ethylene Terephthalate ◽  
Poly Ethylene Terephthalate ◽  
Poly Ethylene

Physical Properties of Thin Films of GaAs and AlxGa1-xAs Grown by Solid-Arsenic-Based MOCVD

2014 ◽  
Vol 976 ◽  
pp. 25-29
Author(s):  
Roberto Castillo-Ojeda ◽  
Joel Diaz-Reyes ◽  
Miguel Galván-Arellano ◽  
Ramon Peña-Sierra
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Low Temperature ◽  
Growth Process ◽  
Carbon Incorporation ◽  
Infrared Measurements ◽  
Hall Effect Measurements ◽  
Low Temperature Photoluminescence

We have studied the optical properties of GaAs and AlxGa1-xAs thin films using low-temperature photoluminescence and Fourier transform infrared spectroscopy. The GaAs and its alloys were grown by MOCVD using solid arsenic instead of arsine, as the arsenic precursor. The gallium and aluminium precursors were trimethylgallium (TMGa) and trimethylaluminium (TMAl), respectively. Some difficulties for growing AlxGa1-xAs by solid-arsenic-based MOCVD system are the composition homogeneity of the layers and the oxygen and carbon incorporation during the growth process. The composition homogeneity of the films was evaluated by low-temperature photoluminescence. Infrared measurements on the samples allowed the identification of the residual impurities, which are carbon-substitutional, Ga2O3, molecular oxygen, humidity and two unidentified impurities. Samples grown at temperatures lower than 750°C were highly resistive, independently of the ratio V/III used; the samples grown at higher temperatures were n-type, as it was proved by Hall effect measurements.

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