Effect of sulfur dioxide on the oxidation of thin films of tin

1983 ◽  
Vol 19 (5-6) ◽  
pp. 187-199 ◽  
Author(s):  
C. I. Muneera ◽  
S. Varghese ◽  
V. Unnikrishnan Nayar
Vacuum ◽  
1967 ◽  
Vol 17 (6) ◽  
pp. 336
Author(s):  
I G Murgulescu ◽  
G Costeanu

2014 ◽  
Vol 81 (5) ◽  
pp. 298 ◽  
Author(s):  
E. A. Shakhno ◽  
D. A. Sinev ◽  
A. M. Kulazhkin

Author(s):  
John C. Bravman

The fabrication of increasingly complex integrated circuit devices represents one of the most challenging areas of applied materials research. As layout geometries are reduced, device operation becomes more readily influenced both by the presence of various materials defects and by the structural integrity of the interfaces involved. Critical to the manufacture of such devices are the technologies associated with the deposition, doping, and oxidation of thin films of polycrystalline silicon (polysilicon). The strong interrelationship between the last two of these processes can result in the formation of unusual morphologies at the interface between the polysilicon and its thermally grown oxide. Conventional TEM has been applied to establish the nature of several such structures. Because their spatial extent is sometimes extremely small (e.g. 20A), high resolution lattice imaging was utilized in order to gain crystallographic information of a very fine scale.


1980 ◽  
Vol 41 (C1) ◽  
pp. C1-327-C1-328
Author(s):  
A. Amulevičius ◽  
D. Baltrùnas ◽  
I. Brodin ◽  
D. Freik ◽  
K. Makariùnas ◽  
...  

2004 ◽  
Vol 40 (11) ◽  
pp. 1161-1164
Author(s):  
A. M. Khoviv ◽  
V. N. Khoviv ◽  
E. N. Vetrova ◽  
L. A. Malevskaya ◽  
T. A. Myachina

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