Photovoltaic effect on the conductive atomic force microscopic characterization of thin dielectric films

2006 ◽  
Vol 89 (13) ◽  
pp. 133109 ◽  
Author(s):  
M. N. Chang ◽  
C. Y. Chen ◽  
M. J. Yang ◽  
C. H. Chien
2007 ◽  
Author(s):  
A. Feng ◽  
V. V. Souchkov ◽  
T. M. H. Wong ◽  
V. N. Faifer ◽  
M. I. Current ◽  
...  

2002 ◽  
Vol 41 (34) ◽  
pp. 7300 ◽  
Author(s):  
Juan-María González-Leal ◽  
Rafael Prieto-Alcón ◽  
José-Andrés Angel ◽  
Dorian A. Minkov ◽  
Emilio Márquez

Author(s):  
Terence Kane ◽  
Michael P. Tenney

Abstract Atomic Force Probe (AFP) techniques are well suited for the electrical characterization of sub-65nm node SOI devices with multiple metal interconnect levels and low-k interlevel dielectric films. This paper discusses the use of these techniques on sub-30nm gatelength SOI MOSFETs.


1991 ◽  
Vol 48-49 ◽  
pp. 237-245
Author(s):  
Pramod C. Karulkar ◽  
R.J. Hillard ◽  
J.M. Heddleson ◽  
P. Rai-Choudhury

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