scholarly journals Residual stress mapping by micro X-ray diffraction: Application to the study of thin film buckling

2002 ◽  
Vol 12 (6) ◽  
pp. 409-416 ◽  
Author(s):  
P. Goudeau ◽  
P. Villain ◽  
N. Tamura ◽  
R. S. Celestre ◽  
H. Padmore
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
X Ray Diffraction ◽  
X Ray ◽  
Stress Mapping

S119 Residual Stress Mapping in a Pipe Weld Repair Using High Energy X-ray Diffraction

2008 ◽  
Vol 23 (2) ◽  
pp. 189-189
Author(s):  
P. J. Bouchard ◽  
M. Turski ◽  
L. Edwards
Keyword(s):  
Residual Stress ◽  
High Energy ◽  
X Ray Diffraction ◽  
Weld Repair ◽  
X Ray ◽  
Stress Mapping

X-ray diffraction residual stress calculation on textured La2/3Sr1/3MnO3 thin film

2004 ◽  
Vol 263 (1-4) ◽  
pp. 185-191 ◽  
Author(s):  
Lamartine Meda ◽  
Klaus H. Dahmen ◽  
Saleh Hayek ◽  
Hamid Garmestani
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
X Ray Diffraction ◽  
X Ray ◽  
Stress Calculation

X-ray diffraction measurement of residual stress in epitaxial ZnO/α-Al2O3 thin film

2011 ◽  
Vol 38 (3) ◽  
pp. 186-191 ◽  
Author(s):  
Farid Takali ◽  
Anouar Njeh ◽  
Hartmut Fuess ◽  
Mohamed Hédi Ben Ghozlen
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Α Al2o3 ◽  
Al2o3 Thin Film

scholarly journals Measurement Technique for the Evaluation of Residual Stress in Epitaxial Thin Film by Asymmetric X-Ray Diffraction.

1999 ◽  
Vol 107 (1247) ◽  
pp. 606-610 ◽  
Author(s):  
Hiroshi UCHIDA ◽  
Takanori KIGUCHI ◽  
Atsushi SAIKI ◽  
Naoki WAKIYA ◽  
Nobuo ISHIZAWA ◽  
...  
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
Measurement Technique ◽  
X Ray Diffraction ◽  
Epitaxial Thin Film ◽  
X Ray

scholarly journals Fast residual stress mapping using energy-dispersive synchrotron X-ray diffraction on station 16.3 at the SRS

2002 ◽  
Vol 9 (2) ◽  
pp. 77-81 ◽  
Author(s):  
Alexander M. Korsunsky ◽  
Steve P. Collins ◽  
R. Alexander Owen ◽  
Mark R. Daymond ◽  
Saïda Achtioui ◽  
...  
Keyword(s):  
Residual Stress ◽  
Energy Dispersive ◽  
X Ray Diffraction ◽  
X Ray ◽  
Stress Mapping

scholarly journals Properties of RF-Sputtered PZT Thin Films with Ti/Pt Electrodes

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Cui Yan ◽  
Yao Minglei ◽  
Zhang Qunying ◽  
Chen Xiaolong ◽  
Chu Jinkui ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stress ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
X Ray ◽  
Grain Sizes ◽  
Pzt Thin Film ◽  
Average Residual

Effect of annealing temperature and thin film thickness on properties of Pb(Zr0.53Ti0.47)O3(PZT) thin film deposited via radiofrequency magnetron sputtering technique onto Pt/Ti/SiO2/Si substrate was investigated. Average grain sizes of the PZT thin film were measured by atomic force microscope; their preferred orientation was studied through X-ray diffraction analysis. Average residual stress in the thin film was estimated according to the optimized Stoney formula, and impedance spectroscopy characterization was performed via an intelligent LCR measuring instrument. Average grain sizes of PZT thin films were 60 nm~90 nm and their average roughness was less than 2 nm. According to X-ray diffraction analysis, 600°C is the optimal annealing temperature to obtain the PZT thin film with better crystallization. Average residual stress showed that thermal mismatch was the decisive factor of residual stress in Pt/Ti/SiO2/Si substrate; the residual stress in PZT thin film decreased as their thickness increased and increased with annealing temperature. The dielectric constant and loss angle tangent were extremely increased with the thickness of PZT thin films. The capacitance of the device can be adjusted according to the thickness of PZT thin films.

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