Effect of grain orientation in x-ray diffraction pattern on residual stress in polycrystalline ferroelectric thin film

2012 ◽  
Vol 112 (4) ◽  
pp. 043521 ◽  
Author(s):  
L. H. Xu ◽  
D. D. Jiang ◽  
X. J. Zheng
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
Diffraction Pattern ◽  
Grain Orientation ◽  
Ferroelectric Thin Film ◽  
X Ray Diffraction ◽  
X Ray

X-ray diffraction residual stress calculation on textured La2/3Sr1/3MnO3 thin film

2004 ◽  
Vol 263 (1-4) ◽  
pp. 185-191 ◽  
Author(s):  
Lamartine Meda ◽  
Klaus H. Dahmen ◽  
Saleh Hayek ◽  
Hamid Garmestani
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
X Ray Diffraction ◽  
X Ray ◽  
Stress Calculation

The Evolution of Activation Field with Temperature in Ferroelectric Copolymer of Vinylidene Fluoride and Trifluoroethylene Films

2013 ◽  
Vol 785-786 ◽  
pp. 761-766
Author(s):  
Lin Jiang ◽  
Xiang Jian Meng ◽  
X. L. Zhao ◽  
B. B. Tian ◽  
B. L. Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Glass Transition ◽  
Vinylidene Fluoride ◽  
Ferroelectric Thin Film ◽  
Transition Process ◽  
The Other ◽  
Polarization Reversal ◽  
X Ray Diffraction ◽  
X Ray ◽  
Polyimide Substrate

Vinylidene fluoride and trifluoroethylene [P(VDF-TrFE)] ferroelectric thin film was spin-coated on Au-coated polyimide substrate and its polarization reversal was investigated by analyzing the evolution of activation field (α) with temperature. Although α is nearly a constant between 300 and 330 K, it increases linearly when temperature rates between 200 and 230 K, and between 230 and 300 K. On the other hand, the intensity of X-ray diffraction for P(VDF-TrFE) films from 200 to 330 K indicates that glass-transition process plays a significant role in both the microstructure and the polarization reversal of P(VDF-TrFE) copolymer.

X-ray diffraction measurement of residual stress in epitaxial ZnO/α-Al2O3 thin film

2011 ◽  
Vol 38 (3) ◽  
pp. 186-191 ◽  
Author(s):  
Farid Takali ◽  
Anouar Njeh ◽  
Hartmut Fuess ◽  
Mohamed Hédi Ben Ghozlen
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Α Al2o3 ◽  
Al2o3 Thin Film

scholarly journals Measurement Technique for the Evaluation of Residual Stress in Epitaxial Thin Film by Asymmetric X-Ray Diffraction.

1999 ◽  
Vol 107 (1247) ◽  
pp. 606-610 ◽  
Author(s):  
Hiroshi UCHIDA ◽  
Takanori KIGUCHI ◽  
Atsushi SAIKI ◽  
Naoki WAKIYA ◽  
Nobuo ISHIZAWA ◽  
...  
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
Measurement Technique ◽  
X Ray Diffraction ◽  
Epitaxial Thin Film ◽  
X Ray

scholarly journals Residual stress mapping by micro X-ray diffraction: Application to the study of thin film buckling

2002 ◽  
Vol 12 (6) ◽  
pp. 409-416 ◽  
Author(s):  
P. Goudeau ◽  
P. Villain ◽  
N. Tamura ◽  
R. S. Celestre ◽  
H. Padmore
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
X Ray Diffraction ◽  
X Ray ◽  
Stress Mapping

Cu2ZnSnSe4 from Chemically Deposited Binary Films

2014 ◽  
Vol 1670 ◽  
Author(s):  
Enue Barrios-Salgado ◽  
José Campos ◽  
M. T. S. Nair ◽  
P. K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Diffraction Pattern ◽  
Pattern Matching ◽  
Optical Band Gap ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sodium Selenosulfate ◽  
P Type

AbstractChemically deposited thin film stack of SnSe-ZnSe-Cu2-xSe was heated in nitrogen with Se vapor at 350-400 oC to produce Cu2ZnSnSe4 (CZTSe) thin films. For this, a thin film of SnSe with 180 nm thickness was deposited at 26 °C from a chemical bath containing tin(II) chloride, triethanolamine, sodium hydroxide, sodium selenosulfate, and a small quantity of polyvinylpyrrolidone. Thin films of ZnSe and Cu2-xSe were subsequently deposited on this SnSe film, also from chemical bath. The CZTSe thin film produced this way shows X-ray diffraction pattern matching that of Cu2ZnSnSe4 (kesterite/stannite) and have a Zn-rich composition. The film has an optical band gap of 0.9-1.0 eV and p-type electrical conductivity, 0.2-0.06 Ω-1 cm-1.

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