Simulation of the large-area growth of homoepitaxial 4H-Sic by chemical vapor deposition

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-1079-Pr3-1086 ◽  
Author(s):  
M. Pons ◽  
J. Mezière ◽  
J. M. Dedulle ◽  
S. Wan Tang Kuan ◽  
E. Blanquet ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
Area Growth

Large-area growth of high-quality graphene/MoS2 vertical heterostructures by chemical vapor deposition with nucleation control

Carbon ◽  
2020 ◽  
Vol 168 ◽  
pp. 580-587
Author(s):  
Van Tu Nguyen ◽  
Young Chul Kim ◽  
Yeong Hwan Ahn ◽  
Soonil Lee ◽  
Ji-Yong Park
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
High Quality ◽  
Area Growth

scholarly journals Large area growth of few-layer In2Te3 films by chemical vapor deposition and its magnetoresistance properties

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Shaohui Zhang ◽  
Jingyang Zhang ◽  
Baosheng Liu ◽  
Xiaobo Jia ◽  
Guofu Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
Area Growth

Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition

2002 ◽  
Vol 389-393 ◽  
pp. 223-226 ◽  
Author(s):  
Michel Pons ◽  
Jérôme Mezière ◽  
Stephane Wan Tang Kuan ◽  
Elisabeth Blanquet ◽  
Pierre Ferret ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
Area Growth

scholarly journals Large-area growth of SnS2 nanosheets by chemical vapor deposition for high-performance photodetectors

RSC Advances ◽  
2021 ◽  
Vol 11 (48) ◽  
pp. 29960-29964
Author(s):  
Ying Chen ◽  
Man Zhang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Performance ◽  
Chemical Vapor ◽  
Large Area ◽  
Si Substrates ◽  
Cvd Method ◽  
Area Growth

Large-area SnS2 nanosheets were grown through a CVD method by using SnCl2 on SiO2/Si substrates as the precursors. The SnS2 nanosheets-based photodetectors shown high-performance.

scholarly journals Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Zhenzhen Tian ◽  
Xiaoming Yuan ◽  
Ziran Zhang ◽  
Wuao Jia ◽  
Jian Zhou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Driving Force ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Nanowire Growth ◽  
Calphad Approach ◽  
Deposition Method ◽  
Large Area ◽  
Growth Phenomenon

AbstractGrowth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth.

scholarly journals Practical Route for the Low-Temperature Growth of Large-Area Bilayer Graphene on Polycrystalline Nickel by Cold-Wall Chemical Vapor Deposition

ACS Omega ◽  
2021 ◽  
Author(s):  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Nur Hamizah Zainal Ariffin ◽  
Poh Choon Ooi ◽  
Mohd Farhanulhakim Mohd Razip Wee ◽  
Mohd Ambri Mohamed ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
Cold Wall ◽  
Polycrystalline Nickel ◽  
Large Area ◽  
Temperature Growth ◽  
Low Temperature Growth

CMOS-Compatible Synthesis of Large-Area, High-Mobility Graphene by Chemical Vapor Deposition of Acetylene on Cobalt Thin Films

ACS Nano ◽  
2011 ◽  
Vol 5 (9) ◽  
pp. 7198-7204 ◽  
Author(s):  
Michael E. Ramón ◽  
Aparna Gupta ◽  
Chris Corbet ◽  
Domingo A. Ferrer ◽  
Hema C. P. Movva ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Large Area ◽  
Cobalt Thin Films ◽  
Cmos Compatible
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