scholarly journals Large-area growth of SnS2 nanosheets by chemical vapor deposition for high-performance photodetectors

RSC Advances ◽  
2021 ◽  
Vol 11 (48) ◽  
pp. 29960-29964
Author(s):  
Ying Chen ◽  
Man Zhang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Performance ◽  
Chemical Vapor ◽  
Large Area ◽  
Si Substrates ◽  
Cvd Method ◽  
Area Growth

Large-area SnS2 nanosheets were grown through a CVD method by using SnCl2 on SiO2/Si substrates as the precursors. The SnS2 nanosheets-based photodetectors shown high-performance.

Simulation of the large-area growth of homoepitaxial 4H-Sic by chemical vapor deposition

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-1079-Pr3-1086 ◽  
Author(s):  
M. Pons ◽  
J. Mezière ◽  
J. M. Dedulle ◽  
S. Wan Tang Kuan ◽  
E. Blanquet ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
Area Growth

Synthesis of uniformly distributed carbon nanotubes on a large area of Si substrates by thermal chemical vapor deposition

1999 ◽  
Vol 75 (12) ◽  
pp. 1721-1723 ◽  
Author(s):  
Cheol Jin Lee ◽  
Dae Woon Kim ◽  
Tae Jae Lee ◽  
Young Chul Choi ◽  
Young Soo Park ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
Thermal Chemical Vapor Deposition ◽  
Si Substrates

Large area depositon of Cd1-xZnxTe on GaAs and Si substrates by metalorganic chemical vapor deposition

1995 ◽  
Vol 24 (5) ◽  
pp. 483-489 ◽  
Author(s):  
N. H. Karam ◽  
R. Sudharsanan ◽  
A. Mastrovito ◽  
M. M. Sanfacon ◽  
F. T. J. Smith ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
Si Substrates ◽  
Metalorganic Chemical

Large-area growth of high-quality graphene/MoS2 vertical heterostructures by chemical vapor deposition with nucleation control

Carbon ◽  
2020 ◽  
Vol 168 ◽  
pp. 580-587
Author(s):  
Van Tu Nguyen ◽  
Young Chul Kim ◽  
Yeong Hwan Ahn ◽  
Soonil Lee ◽  
Ji-Yong Park
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
High Quality ◽  
Area Growth

scholarly journals Large-area synthesis of monolayer MoSe2 films on SiO2/Si substrates by atmospheric pressure chemical vapor deposition

RSC Advances ◽  
2017 ◽  
Vol 7 (45) ◽  
pp. 27969-27973 ◽  
Author(s):  
Yu Zhao ◽  
Hyunjea Lee ◽  
Woong Choi ◽  
Weidong Fei ◽  
Cheol Jin Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Large Area ◽  
Si Substrates ◽  
Pressure Chemical

We report the synthesis of large-area monolayer MoSe2 films extended up to a millimeter scale on SiO2/Si substrates by atmospheric pressure chemical vapor deposition (CVD).

scholarly journals Large area growth of few-layer In2Te3 films by chemical vapor deposition and its magnetoresistance properties

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Shaohui Zhang ◽  
Jingyang Zhang ◽  
Baosheng Liu ◽  
Xiaobo Jia ◽  
Guofu Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
Area Growth

Ferroelectric PbZrxTi1-xO3 Thin Films Grown by Organometallic Chemical Vapor Deposition

1991 ◽  
Vol 243 ◽  
Author(s):  
G.J.M. Dormans ◽  
M. de Keijser ◽  
P. J. van Veldhoven
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Growth ◽  
Large Area ◽  
Si Substrates ◽  
Ic Technology ◽  
Ferroelectric Switching ◽  
Organometallic Chemical Vapor Deposition

AbstractFor the successful integration of ferroelectric thin films in IC technology, there is a need for a deposition technique capable of growing homogeneous layers at high growth rates over large-area structured substrates. Organometallic chemical vapor deposition (OMCVD) is a promising technique for meeting these demands.Ferroelectric layers of PbZrxTi1-xO3 (PZT) were grown by OMCVD on Pt-coated 10 cm diameter Si-substrates using the precursors tetra-ethyl-lead, tetra-iso-propoxy-titanium and tetra-tertiary-butoxy-zirconium at 700 °C without any post anneal. At this temperature the layers are single phase and highly (h00) and/or (00l) oriented. The layers show good ferroelectric switching properties with high remanent polarizations, but also with high coercive field strengths. Fatigue measurements are presented for these OMCVD grown PZT layers. The layers have a switching lifetime exceeding 1011 cycles at a switching amplitude of 5 V.

scholarly journals Effects of Experimental Configuration on the Morphology of Two-Dimensional ZnO Nanostructures Synthesized by Thermal Chemical-Vapor Deposition

Crystals ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 517
Author(s):  
Seok Cheol Choi ◽  
Do Kyung Lee ◽  
Sang Ho Sohn
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Morphological Properties ◽  
Two Dimensional ◽  
Zno Nanostructures ◽  
Au Catalyst ◽  
Thermal Chemical Vapor Deposition ◽  
Si Substrates ◽  
Cvd Method

Using two experimental configurations, self-assembled zinc oxide (ZnO) nanostructures including nanoplates, nanosaws, and nanobelts were synthesized by thermal chemical-vapor deposition (CVD), and their morphological properties were investigated. ZnO nanostructures grown on Au-coated Si substrates in a parallel setup revealed highly defined ZnO nanoplates and branched nanowires. ZnO nanostructures grown in a perpendicular setup using Si substrates with and without the Au catalyst exhibited vertically oriented ZnO nanosaws and randomly aligned nanobelts, respectively. In the thermal CVD method, experiment conditions such as oxygen-flow rate, growth temperature, and catalyst, and experimental configurations (i.e., parallel and perpendicular setups) were important parameters to control the morphologies of two-dimensional ZnO nanostructures showing platelike, sawlike, and beltlike shapes.

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