scholarly journals Effect of the Gas‐Phase Reaction in Metallorganic Chemical Vapor Deposition of TIN from Tetrakis(dimethylamido)titanium

1998 ◽  
Vol 145 (7) ◽  
pp. 2453-2456 ◽  
Author(s):  
Ju‐Young Yun ◽  
Man‐Young Park ◽  
Shi‐Woo Rhee
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Phase Reaction ◽  
Gas Phase Reaction

Modeling of the elementary gas‐phase reaction during chemical vapor deposition of silicon carbide from CH 3 SiCl 3 /H 2

2020 ◽  
Vol 52 (6) ◽  
pp. 359-367
Author(s):  
Noboru Sato ◽  
Yuichi Funato ◽  
Yasuyuki Fukushima ◽  
Takeshi Momose ◽  
Mitsuo Koshi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Phase Reaction ◽  
Gas Phase Reaction

Effect of pressure on the gas-phase chemistry when using monomethylsilane and dimethylsilane in hot-wire chemical vapor deposition

2015 ◽  
Vol 93 (1) ◽  
pp. 82-90 ◽  
Author(s):  
Rim Toukabri ◽  
Yujun Shi
Keyword(s):  
Free Radical ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Phase Reaction ◽  
Hot Wire ◽  
Gas Phase Reaction ◽  
Gas Phase Chemistry ◽  
Phase Chemistry

The effect of source gas pressure on the gas-phase reaction chemistry of dimethylsilane (DMS) and monomethylsilane (MMS) in the hot-wire chemical vapor deposition process has been studied by examining the secondary gas-phase reaction products in a reactor using a soft laser ionization source coupled with mass spectrometry. For DMS, the increase in sample pressure has resulted in the formation of small hydrocarbons, including ethene, acetylene, propene, and propyne. This leads to a switch from silylene dominant chemistry to a free radical dominant one with the pressure increase at low filament temperatures of 1200 and 1300 °C. At the lower pressure of 0.12 Torr, the formation of 1,1,2,2-tetramethyldisilane by dimethylsilylene insertion reaction into the Si–H bond in DMS is favored over trimethylsilane produced from a free radical recombination reaction for a short reaction time. However, when the pressure is increased by 10 times, the gas-phase chemistry becomes dominated by the formation of trimethylsilane. We have demonstrated that trapping of the corresponding active intermediates by the small hydrocarbons produced in situ is responsible for the observed switch. In the study with MMS, the gas-phase chemistry is dominated by the formation of 1,2-dimethyldisilane and 1,3-disilacyclobutane at both pressures of 0.48 and 1.2 Torr. Unlike DMS, the gas-phase reaction chemistry with MMS does not involve free radicals, which are the precursors to produce small hydrocarbons. The absence of small hydrocarbons formed in situ with MMS explains the preservation in chemistry upon the increase in pressure when MMS is used as a source gas.

scholarly journals Numerical Simulation of Gas Phase Reaction for Epitaxial Chemical Vapor Deposition of Silicon Carbide by Methyltrichlorosilane in Horizontal Hot-Wall Reactor

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7532
Author(s):  
Botao Song ◽  
Bing Gao ◽  
Pengfei Han ◽  
Yue Yu ◽  
Xia Tang
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Consumption Rate ◽  
Chemical Vapor ◽  
Phase Reaction ◽  
Gas Flow Rate

Methyltrichlorosilane (CH3SiCl3, MTS) has good performance in stoichiometric silicon carbide (SiC) deposition and can be facilitated at relatively lower temperature. Simulations of the chemical vapor deposition in the two-dimensional horizontal hot-wall reactor for epitaxial processes of SiC, which were prepared from MTS-H2 gaseous system, were performed in this work by using the finite element method. The chemistry kinetic model of gas-phase reactions employed in this work was proposed by other researchers. The total gas flow rate, temperature, and ratio of MTS/H2 were the main process parameters in this work, and their effects on consumption rate of MTS, molar fraction of intermediate species and C/Si ratio inside the hot reaction chamber were analyzed in detail. The phenomena of our simulations are interesting. Both low total gas flow rate and high substrate temperature have obvious effectiveness on increasing the consumption rate of MTS. For all cases, the highest three C contained intermediates are CH4, C2H4 and C2H2, respectively, while the highest three Si/Cl contained intermediates are SiCl2, SiCl4 and HCl, respectively. Furthermore, low total gas flow results in a uniform C/Si ratio at different temperatures, and reducing the ratio of MTS/H2 is an interesting way to raise the C/Si ratio in the reactor.

Sign in / Sign up

Export Citation Format

Share Document