Capacitance Model for Thin-Film Transistors with Interface Traps

2019 ◽  
Vol 33 (5) ◽  
pp. 105-109 ◽  
Author(s):  
Hiroshi Tsuji ◽  
Yoshinari Kamakura ◽  
Kenji Taniguchi
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Interface Traps ◽  
Capacitance Model

Influence of Interface Traps on the Electrical Properties of Oxide Thin-Film Transistors with Different Channel Thicknesses

2017 ◽  
Vol 46 ◽  
pp. 93-99
Author(s):  
Jing Xin Jiang ◽  
Da Peng Wang ◽  
Tokiyoshi Matsuda ◽  
Mutsumi Kimura ◽  
Sheng Yang Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Interface Traps ◽  
Screening Length ◽  
Oxide Tft ◽  
Turn On ◽  
The Difference

The electrical properties of bottom-gate amorphous InSnZnO (a-ITZO) thin-film transistors (TFTs) with different channel thicknesses (TITZO) were investigated. The difference between front- and back-channel interface traps influence on subthreshold swing (S) and turn on voltage (Von) of a-ITZO TFTs was further analyzed using device simulation. Variations of front-channel interface traps (Naf) on S and Von were hardly dependent on TITZO. However, variations of S and Von became larger for thinner TITZO TFT when back-channel interface traps (Nabk) varied; which can be explained by considering screening length. Not only Naf but also Nabk are important factors of S and Von to achieve high performance thinner oxide TFT.

COMPACT CAPACITANCE MODEL FOR PRINTED THIN FILM TRANSISTORS WITH NON-IDEAL CONTACTS

2011 ◽  
Vol 20 (04) ◽  
pp. 801-813
Author(s):  
SHANTANU BHALERAO ◽  
ALEXEY KOUDYMOV ◽  
MICHAEL SHUR ◽  
TROND YTTERDAL ◽  
WARREN JACKSON ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Dispersion Model ◽  
Frequency Dispersion ◽  
Drain Current ◽  
Channel Length ◽  
Amorphous Semiconductors ◽  
Localized States ◽  
Gate Length ◽  
Capacitance Model

We report on a compact capacitance model that accurately describes both the gate length dependent and the gate length independent frequency dispersion observed in C-V curves for printed thin film transistors with non-ideal contacts. We also show that modeling the drain current with two adjacent subthreshold regions (instead of just one in the previous RPI TFT model) is needed to match the measured current-voltage characteristics. We show that Elmore model which accounts for channel length transit time is not sufficient for describing the frequency dispersion in C-V curves for printed TFTs and present the new Variable Dispersion Model (VDM). VDM reproduces the experimentally observed gate length independent dispersion arising due to the finite time of the electron exchange between the localized states in the mobility gap and the states above the mobility edge in amorphous semiconductors. The combined Elmore-VDM model has been implemented in AIM-Spice and showed good agreement with measured C-V data.

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

A Proposal of High Performance Organic Thin Film Transistors

2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film
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