Gate Capacitance-Dependent Field-Effect Mobility in Solution-Processed Oxide Semiconductor Thin-Film Transistors

2014 ◽  
Vol 24 (29) ◽  
pp. 4689-4697 ◽  
Author(s):  
Eungkyu Lee ◽  
Jieun Ko ◽  
Keon-Hee Lim ◽  
Kyongjun Kim ◽  
Si Yun Park ◽  
...  
2017 ◽  
Vol 5 (21) ◽  
pp. 5048-5054 ◽  
Author(s):  
Tim Leydecker ◽  
Laura Favaretto ◽  
Duc Trong Duong ◽  
Gabriella Zappalà ◽  
Karl Börjesson ◽  
...  

Here we show that the blending of structurally similar oligothiophene molecules is an effective approach to improve the field-effect mobility and Ion/Ioff as compared to single component based transistors.


2017 ◽  
Vol 5 (31) ◽  
pp. 7768-7776 ◽  
Author(s):  
Keon-Hee Lim ◽  
Jinwon Lee ◽  
Jae-Eun Huh ◽  
Jintaek Park ◽  
Jun-Hee Lee ◽  
...  

Here we report a systematic study on the effects of precursors and solvents in solution-processed oxide semiconductor thin film transistors.


2020 ◽  
Author(s):  
Youn Sang Kim ◽  
Changik Im ◽  
Nam-Kwang Cho ◽  
Jintaek Park ◽  
Eun Goo Lee ◽  
...  

Abstract Oxide thin film transistors (TFTs) have attracted much attention because they can be applied to flexible and large-scaled switching devices. Especially, Oxide semiconductors (OSs) have been developed as active layers of TFTs and, among them, Indium-Gallium-Zinc-Oxide (IGZO) is actively used in the OLED display field. However, IGZO TFTs are limited by low field-effect mobility, which critically affects display resolution and power consumption, despite superior off-state properties. Herein, we prevailed new working mechanisms in dual-stacked OS and, based on this, developed dual-stacked OS-based TFT with high field-effect mobility (~80 cm2/V·s), ideal threshold voltage near 0 V, high on-off current ratio (>109), and good stability at bias stress. In dual-stacked OS, induced areas are formed at interface by band-offset: band-offset-induced area (BOIA) and BOIA-induced area (BIA). They connect gate-bias-induced area (GBIA) and electrode-bias-induced area (EBIA), resulting in high current flow. Such mechanism will provide new design rules for high performance OS-based TFTs.


Small ◽  
2010 ◽  
Vol 6 (11) ◽  
pp. 1210-1215 ◽  
Author(s):  
Toshiyuki Kobayashi ◽  
Nozomi Kimura ◽  
Junbin Chi ◽  
Shintaro Hirata ◽  
Daisuke Hobara

2005 ◽  
Vol 87 (20) ◽  
pp. 203504 ◽  
Author(s):  
Masayuki Chikamatsu ◽  
Shuichi Nagamatsu ◽  
Yuji Yoshida ◽  
Kazuhiro Saito ◽  
Kiyoshi Yase ◽  
...  

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